Influence of carrier recombination on the pulsed photothermal beam deflection signal in semiconductors

Petrovsky, A. N.; Salnick, Alex; Zuev, V. V.; Mukhin, D. O.; Mekhtiev, M. M.; Pelzl, J.; Boccara, A. C.; Fournier, Danièle

doi:10.1016/0038-1098(92)90503-2

Cited by 8 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Cheng and Zhang's theory predicts the existence of the dip in photothermal refraction also, where it has been experimentally observed. 7, 26 We have not observed the predicted dip in our photothermal displacement experiments for either GaAs or InGaAs/AlGaAs MQW. It is perhaps not surprising that we do not observe the effect of the diffusion of photogenerated carriers because the recombination time in a direct band gap semiconductor like GaAs is expected to be very short and the parameter ␤ is small.…”

Section: Theorymentioning

confidence: 62%

Thermal diffusivity measurement of solid materials by the pulsed photothermal displacement technique

Bennis

Vyas

Gupta

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Section: Theorymentioning

confidence: 62%

Thermal diffusivity measurement of solid materials by the pulsed photothermal displacement technique

Bennis

Vyas

Gupta

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…A PDS é uma técnica muito sensível para o estudo de vários parâmetros de transporte em filmes de semicondutores, como, por ex., difusividade térmica, difusividade eletrônica e velocidade de recombinação de superfície 36 . Mathew et al 37 empregaram a PDS para medida da difusividade térmica de diferentes composições de filmes finos de semicondutores amorfos Ge x Se 100-x .…”

Section: O Efeito Miragem De Temperaturaunclassified

Princípio e utilização da técnica de efeito miragem de concentração

Trigueiro¹,

Matencio²,

Moraga³

et al. 2006

Quím. Nova

View full text Add to dashboard Cite

The aim of this work is to present the theoretical and experimental aspects of the mirage effect technique. We are especially interested in the concentration mirage effect, which is a powerful tool in the study of electrochemical reactions that produce ionic movements close to electrodes and to get some fundamental information on mass transport and charge transfer during electrochemical processes. Limitations of this technique are discussed as well as the recent attempts to overcome them.

show abstract

“…Opsal and Rosencwaig (1985) introduced their investigation of semiconductors based on the results shown by Rosencwaig et al (1983). Petrovsky et al (1992) studied the influence of carrier recombination on the pulsed photothermal beam deflection signal in semiconductors, while Surnev and Ivanov (1992) investigated the thermal diffusivity measurements in semiconductors and the influence of the carrier diffusion and recombination. Kuo et al (1992) studied the thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry.…”

Section: Introductionmentioning

confidence: 99%

A study on photothermal waves in an unbounded semiconductor medium with cylindrical cavity

Hobiny

Abbas

2016

Mech Time-Depend Mater

View full text Add to dashboard Cite

The theory of coupled plasma, thermal, and elastic waves was used to investigate the wave propagation on semiconductor material with cylindrical cavity during photothermoelastic process. An unbounded material, elastic semiconductor containing a cylindrical cavity with isotropic and homogeneous thermal and elastic properties has been considered. The inner surface of cavity is constrained, and the carrier density is photogenerated by an exponentially decaying pulse boundary heat flux. The eigenvalue approach, together with Laplace transform techniques, was used to obtain the analytical solutions. Numerical computations have been done for a silicon-like semiconductor material, and the results are presented graphically to estimate the effect of the coupling between the plasma, thermal, and elastic waves. The graphical results indicate that the thermal activation coupling parameter is an important phenomenon and has a great effect on the distribution of field quantities.

show abstract

Influence of carrier recombination on the pulsed photothermal beam deflection signal in semiconductors

Cited by 8 publications

References 1 publication

Thermal diffusivity measurement of solid materials by the pulsed photothermal displacement technique

Thermal diffusivity measurement of solid materials by the pulsed photothermal displacement technique

Princípio e utilização da técnica de efeito miragem de concentração

A study on photothermal waves in an unbounded semiconductor medium with cylindrical cavity

Contact Info

Product

Resources

About