Abstract:A theoretical study of the influence of word line and common source electrodes on the program operation in shrank SuperFlash memory is proposed. Numerical simulations demonstrate that the literature model defined for previous nodes is not always suitable, due to the continuous cell physical size reduction and to the consequent increment of capacitive coupling between the floating gate and adjacent electrodes. To get a deeper insight, an analytical model of the electric field in the region of source side inject… Show more
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