Influence of deposited energy in sensitive volume on temperature dependence of SEU sensitivity in SRAM devices

Abstract

The effects of temperature on the single-event upset (SEU) response of commercial and radiation-hardened SRAMs are investigated by experiment. The results showed that the SEU sensitivity relied on the temperature during the testing. However, it was also observed the amplitude of energy deposition of ions in sensitive volume of SRAM devices is able to affect the SEU sensitivity. When the deposited energy in sensitive volume is far larger than the critical value of inducing a SEU occurrence, the SEU sensitivity both in Bulk and SOI technologies displays a less temperature dependency. This result is attributed to the impact of energy deposition on the ion-induced transient pulse shape. The deposited energy in sensitive volume by different ions was estimated by Monte Carlo simulation and the role of energy deposition in transient pulse shape was discussed. The conclusion of detailed analysis is agreement with the results obtained in experiments.Index Terms-Single event upset, temperature dependence, energy deposition, Monte Carlo simulation, SRAM, heavy ions, bulk and SOI technologies.

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

“…Electronics 2024, 13, 2012 2 of 13 SRAM devices. They found that the single event cross-section of the SRAM devices increased by 98% when the operating temperature was increased from 293 K to 388 K [9]. Cai and his coworkers investigated the temperature dependence of the SEU cross-section of commercial 0.15-micron Thin Film Transistor (TFT) SRAMs in the temperature range of 215-353 K. It was found that the SEU cross-section hardly varied with the temperature in the saturated region of the cross-section.…”