Influence of deposition parameters and annealing on Cu2ZnSnS4 thin films grown by SILAR

Patel, Kinjal D.; Shah, Dimple; Kheraj, Vipul

doi:10.1016/j.jallcom.2014.11.019

Cited by 33 publications

(17 citation statements)

References 37 publications

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“…A c c e p t e d M a n u s c r i p t 10 The optimal number of dip cycles we achieved is consistent with what K. Patel proposed 50-75 times [22]. By combining our work with Raman analysis proposed by K. Patel et al [22], the primary secondary phase like CuS only grows along with the CZTS growth in the initial phase of SILAR deposition; as the number of dip cycle increasing, Raman spectra indicates that the peak intensity of this secondary phase reduces compared to the CZTS, which shows that as long as proceeding the optimal number of dip cycles, the secondary phase can be furthest suppressed.…”

Section: Page 10 Of 29supporting

confidence: 86%

“…By combining our work with Raman analysis proposed by K. Patel et al [22], the primary secondary phase like CuS only grows along with the CZTS growth in the initial phase of SILAR deposition; as the number of dip cycle increasing, Raman spectra indicates that the peak intensity of this secondary phase reduces compared to the CZTS, which shows that as long as proceeding the optimal number of dip cycles, the secondary phase can be furthest suppressed. In this case, we conclude that the minimization of impurity phase in CZTS film could be one of important reasons that lead to the satisfactory energy bandgap and photovoltaic performance as discussed in next section.…”

Section: Page 10 Of 29supporting

confidence: 58%

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Synthesis of Cu2ZnSnS4 thin film through chemical successive ionic layer adsorption and reactions

Sui

Cao

et al. 2015

Applied Surface Science

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Section: Page 10 Of 29supporting

confidence: 86%

Section: Page 10 Of 29supporting

confidence: 58%

Synthesis of Cu2ZnSnS4 thin film through chemical successive ionic layer adsorption and reactions

Sui

Cao

et al. 2015

Applied Surface Science

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“…This includes spray pyrolysis, solvothermal route, hydrothermal, spin coating, electrochemical deposition, and CBD. The same techniques had been widely used for the synthesis of CdTe [33], CIGS [34], and CZTS [35] semiconductor thin films.…”

Section: Non-vacuum Deposition Techniquesmentioning

confidence: 99%

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Deshmukh

Kheraj

2017

Nanotechnol. Environ. Eng.

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Since the last few decades, light-absorbing materials based on CuInGaSe 2 (CIGS), CuInS 2 (CIS), and CdTe have dominated the research in thin-film solar cells.To fabricate large-scale solar cells from these materials, problems may arise due to limited availability of the constituents, viz. Se, In, Cd, and Te, and the toxicity of some of these elements. Hence, recent research efforts are attentive toward abundantly available non-toxic, larger value of absorption coefficient and non-conventional elements. The Cu 3 BiS 3 having wittichenite orthorhombic structure is one the most promising absorber layer candidates for low-cost thin-film solar cells. It has suitable direct band gap (1.10-1.86 eV), large absorption coefficient (10 5 cm -1 ) with composition of earth abundant, and relatively non-toxic and cost-effective constituents. Till now, a majority work was done on the preparation of Cu 3 BiS 3 thin films by various techniques. Therefore, a comprehensive review of recent literature of Cu 3 BiS 3 is urgently required. This paper will review the various techniques that have been used to deposit Cu 3 BiS 3 semiconductor with the hope of new paths for the beginner.

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“…A broad doublet near 1354-1404 and 1564-1597 cm -1 is associated with bands D and G of disordered carbon, respectively [34]. A relatively narrow peak near 336 cm -1 belongs to the symmetry band A of the Cu 2 ZnSnS 4 (CZTS) compound [35][36][37]. This mode implies movement of the sulphur atoms only [36].…”

Section: Resultsmentioning

confidence: 99%

Properties and characterization of CZTS nanoparticles prepared by microwave heating irradiation

Grincienė¹,

Pakštas²,

Giraitis³

et al. 2018

chemija

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Cu 2 ZnSnS 4 (CZTS) nanoparticles suitable for solar cell absorber fabrication were synthesized by the microwave-assisted heating method. The influence of the reaction temperature, the temperature increase duration and post-annealing temperature on the chemical composition, crystallographic structure, phase purity and optical properties of CZTS nanocrystals has been investigated by means of XRD, Raman spectroscopy, scanning (SEM) and transmission electron microscopies (TEM), EDX and UV-Vis spectroscopies. The chemical composition of the CZTS nanoparticles synthesized at a temperature of 250°C and the temperature increase duration of 10 min are almost stoichiometric. The post-annealing process of CZTS has been investigated by means of the in situ XRD method. The results obtained point to the presence of a pure CZTS phase after annealing of the synthesized powder at a temperature of 550°C. The direct band gap energy (E g ) of the CZTS nanoparticles obtained depends on the post-annealing temperature and reaches nearly 1.5 eV at 550°C.

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Influence of deposition parameters and annealing on Cu2ZnSnS4 thin films grown by SILAR

Cited by 33 publications

References 37 publications

Synthesis of Cu2ZnSnS4 thin film through chemical successive ionic layer adsorption and reactions

Synthesis of Cu2ZnSnS4 thin film through chemical successive ionic layer adsorption and reactions

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Properties and characterization of CZTS nanoparticles prepared by microwave heating irradiation

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