Influence of deposition process and substrate on the phase transition of vanadium dioxide thin films

Marvel, Robert E.; Harl, Robert R.; Crăciun, V.; Rogers, Bridget R.; Haglund, Richard F.

doi:10.1016/j.actamat.2015.03.009

Cited by 48 publications

(28 citation statements)

References 55 publications

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“…Large-area MoS 2 synthesis techniques could allow a large scale, cheap fabrication of MoS 2 /VO 2 heterojunction devices 26 , 27 . Moreover, recent reports of low-thermal budget deposition of VO 2 thin films by pulsed laser deposition (PLD) are promising for the realization of CMOS compatible heterostructures 28 .…”

Section: Discussionmentioning

confidence: 99%

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Oliva

Casu

Yan

et al. 2017

Sci Rep

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Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS2) on a phase transition material, vanadium dioxide (VO2). The vdW MoS2/VO2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO2. We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

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Section: Discussionmentioning

confidence: 99%

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Oliva

Casu

Yan

et al. 2017

Sci Rep

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“…HfO2 thin films were deposited on SiO2/Si by atomic layer deposition [28]; VO2 thin films were sputter deposited on Si and subsequently thermally oxidized [29]. The annealed VO2…”

Section: (1 Kev Protons)mentioning

confidence: 99%

Electronic Stopping of Slow Protons in Oxides: Scaling Properties

et al. 2017

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Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2 and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies.Instead, the oxygen 2p states are decisive, as corroborated by DFT calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.

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“…A porção amorfa situada entre 20° e 35° foi devido em maior parte ao substrato de vidro usado como suporte aos filmes finos de VO X . Não se pode descartar a presença de fases nanocristalinas, visto que todas as deposições foram realizadas com temperaturas de substrato relativamente baixas e através da técnica de pulverização catódica, condições essas que comumente ocasionam amostras com grãos bastante pequenos ou nanoestruturados [16].…”

Section: Análise Das Fases Presentes Nas Multicamadas De Voxunclassified

Análise comparativa das propriedades elétricas de camadas e multicamadas de VOx depositadas por pulverização catódica para aplicação em bolômetros

Medeiro

Castro²,

Cruz

et al. 2019

Matéria (Rio J.)

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RESUMOFilmes finos de VO X (camada e multicamadas) foram fabricados por pulverização catódica com rádiofrequência assistida por campo magnético constante para aplicação em detectores de radiação infravermelha do tipo bolômetro. As amostras foram fabricadas sem quebra de vácuo a partir de três alvos: V 2 O 3; VO 2 e V 2 O 5 . Um sistema de pulverização catódica com três catodos foi construído para a realização deste trabalho. Os resultados mostraram que ambas as configurações, camadas e multicamadas, apresentaram TCR semelhantes, da ordem de 2 %/K, e resistência de folha inferior a 20 kΩ/quad, sendo ambas recomendadas para emprego em bolômetros. Palavras-chave: VO X , pulverização catódica, bolômetros.ABSTRACT VO X thin films (single and multilayers) were fabricated by RF magnetron sputtering for application in bolometers. The samples were deposited without vacuum break from three targets: V 2 O 3 ; VO 2 and V 2 O 5 . A RF magnetron sputtering system with three cathodes was built to carry out the depositions. The results showed that both configurations, single layers and multilayers, presented similar values of TCR, roughly 2%/K, and sheet resistance less than 20 kΩ/sq, being recommended for application in bolometers.

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Influence of deposition process and substrate on the phase transition of vanadium dioxide thin films

Cited by 48 publications

References 55 publications

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Electronic Stopping of Slow Protons in Oxides: Scaling Properties

Análise comparativa das propriedades elétricas de camadas e multicamadas de VOx depositadas por pulverização catódica para aplicação em bolômetros

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