Influence of different metal over-layers on the electrical behaviour of the MIS Schottky diodes

Abstract

We have employed technology computer-aided design -a Synopsys Õ tool to carry out a comparative study of the electrical behaviour of the metal-insulatorsemiconductor Schottky diodes with different metal contacts (Ag, Au, Pt and Cr), on n-Si(100). We employed physics models to determine the Shockley-Read-Hall (SRH) and Auger recombination rates as a function of electric field profile in the depletion region. An insight was obtained as variation in the electric field at the metal-semiconductor interface due to work function variation affected the current mechanisms and recombination rates. The results were compared with the existing models. On the basis of analysis, merits and demerits of Schottky junctions formed due to these metals are discussed. The ideality factor of Au and Pt was found to be just around 2.0, while it was higher for Cr and Ag. However, the barrier height in the case of Cr was small, thus making it another possible metal layer for the Schottky contact. Similarly, SRH recombination rates were almost negligible for Au and Pt metal layer and became appreciable for Cr and much higher in Ag, making it not a good choice for the Schottky contact.

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

“…This high ideality factor can be ascribed to several influences i.e tunnelling process (Lee et al, 2010) and irregular scatter of the interfacial charges (Demircioğlu et al, 2011), image-force effect (Sharma and Tewari, 2011), interface states , barrier inhomogeneity (Roul et al, 2015) and series resistance (Korucu and Duman, 2015). High value of n verify the existence of an insulator sheet between semiconductor and metal, also (Nasim and Bhatt, 2013). In here, beside the insulator layer of Si 3 N 4 , a little amount of SiO 2 may be formed.…”

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

“…As seen above, the ideality factor values calculated for both devices are greater than unity. In previously published papers [27][28][29][30] about metal-semiconductor junctions, the greater value of the ideality factor was attributed to the distribution of the metal-semiconductor interface states, image force effect, recombination-generation process, and different transport mechanisms besides the TE. In our Au/Pinus brutia/n-Si device, the lower ideality factor value is directly linked to the presence of the pine-based dye layer.…”