Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion

Riedel, Stephan; Schulz, Stefan E.; Baumann, J.; Rennau, M.; Geßner, Thomas

doi:10.1016/s0167-9317(00)00450-0

Cited by 13 publications

(6 citation statements)

References 4 publications

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“…These include some compounds of general structure Me-N, Me-C, Me-O, Me-Si and Me-B (where Me is typically a refractory metal with high melting point). 3 The most widely used materials belonging to this class are TiN, 49,50 TaN 51,52 and double layers of Ta/TaN 53,54 and Ti/TiN. 55 Another class of materials employed includes metallic alloys, generally including W 3 or other refractory metals.…”

Section: Electronic Interconnects and Diffusion Barrier Layersmentioning

confidence: 99%

Review—Ruthenium as Diffusion Barrier Layer in Electronic Interconnects: Current Literature with a Focus on Electrochemical Deposition Methods

Bernasconi

Magagnin

2018

J. Electrochem. Soc.

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Ruthenium is one of the most promising candidates to replace tantalum and titanium based diffusion barrier layers in microelectronics. Its unique properties allow the deposition of ultrathin layers with controlled thickness by means of a wide variety of different techniques. Ruthenium barriers are characterized by good thermal stability, low resistivity and great adherence. Moreover, the copper filling deposited during the Damascene process can be directly applied on the barrier without the need of a seed layer. As a consequence of the industrial interest in developing new ruthenium based interconnects technologies, a significant literature has been produced in the last few years. The scope of the present work is to collect and analyze the literature on the topic, investigating in this way the technologies developed in the past and the current development stage of ruthenium based barrier layers. Due to their multiple advantages, a special focus is devoted to the manufacturing of ruthenium diffusion limiters by mean of wet electrochemical processes.

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Section: Electronic Interconnects and Diffusion Barrier Layersmentioning

confidence: 99%

Review—Ruthenium as Diffusion Barrier Layer in Electronic Interconnects: Current Literature with a Focus on Electrochemical Deposition Methods

Bernasconi

Magagnin

2018

J. Electrochem. Soc.

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“…(1) polycrystalline and amorphous Me-N, Me-C, Me-O and Me-B compounds, such as TiN x [25], VN x [26], ZrN x [27], NbN x [28], MoN x [21], HfN x [29], WN x [30], TaN x [31], WC x [32], TaC x [33], MoO x [34], TaO x [35] and TiB 2 [36], (2) polycrystalline and amorphous Me-Si compounds, such as MoSi x [37], WSi x [38] and TaSi x [39], (3) polycrystalline and amorphous Me alloys, such as TiW x [40], TaCo x and TaFe x [41], TaW x [42], NiNb x [43] and CuZr x [44].…”

Section: Metal-based Barriers As Liners For Cu Seed Depositionmentioning

confidence: 99%

Diffusion Barriers

Hecker¹,

Hübner²

2012

Advanced Interconnects for ULSI Technology

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“…For sub-130 nm silicon integrated circuits, the step coverage and the film quality of glue layers is critical for the optimization of contact resistance (R c ). In general, the Ti and TiN films are deposited by ionized-metal-plasma (IMP) and metallorganic CVD (MOCVD), respectively, to improve the step coverage in high-aspect-ratio features [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. In the MOCVD-TiN deposition, tetrakisdimethylaminotitanium (TDMAT) is typically used as a precursor to obtain chloride-free TiN films [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…Since the electrical properties of MOCVD-TiN films are highly plasma-treatment sensitive, many researching have tried to understand the role of plasma post-treatment in MOCVD-TiN deposition [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. However, most prior researcher has focused on the composition, resistivity change, and barrier property of blanket films but not on the electrical properties of patterned wafers.…”

Section: Introductionmentioning

confidence: 99%