Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

Zhang, J. C.; Jiang, Desheng; Sun, Qijie; Wang, J. F.; Wang, Y. T.; Liu, J. P.; Chen, J.; Jin, R.Q.; Zhu, Junbo; Yang, Hang; Dai, Tao; Jia, Qianqian

doi:10.1063/1.2012531

Cited by 55 publications

(42 citation statements)

References 22 publications

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“…where i ¼ 1 or 2, À i0 represents the energy broadening due to temperature-independent mechanisms such as impurities, 27) dislocations, 28,29) electron interaction and Auger processes, 30) À iLO is the energy broadening caused by the electron (excitonic)-LO phonon interaction, and Â iLO corresponds to the LO phonon temperature. The solid curves in Fig.…”

Section: Resultsmentioning

confidence: 99%

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Jian

Lin

et al. 2013

Jpn. J. Appl. Phys.

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Single crystals of Au-and Ag-doped ReSe 2 (ReSe 2 :Au and ReSe 2 :Ag) have been grown by chemical vapor transport (CVT) method using iodine as a transporting agent. The optical properties are studied by absorption and polarized-thermoreflectance (PTR) spectroscopy at different polarization angles in the temperature range between 12 and 300 K. The direct band-edge excitonic transitions (E ex 1 , E ex 2 , E ex 3 , and E ex s ) have been clearly revealed for the first time in the absorption spectra when the samples are made thin enough. The dominant E ex 1 and E ex 2 excitonic transitions gets strongest as the polarization is parallel and perpendicular to the b-axis, respectively. The parameters that describe the temperature dependence of the excitonic transition energy and the broadening function are extracted and discussed. We have also performed electrical conductivity and Hall measurements at different temperatures to derive the activation energy ( 95 and 50 meV for ReSe 2 :Au and ReSe 2 :Ag, respectively). #

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Section: Resultsmentioning

confidence: 99%

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Jian

Lin

et al. 2013

Jpn. J. Appl. Phys.

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“…For example, some statistical investigations propose that the threading dislocations having a screw-component Burgers vector act as non-radiative centers in GaN epitaxial layers [11]. Hacke et al [12] On the other hand, Zhang et al [6] have found that threading edge dislocations act as non-radiative recombination centers. The CL measurements also show that threading edge dislocations in InGaN/GaN QW structure act as non-radiative recombination centers [13].…”

Section: Dislocations and Near-band Edge Luminescencementioning

confidence: 98%

“…We have investigated the PL integrated intensity of a series of InGaN/GaN multiple quantum wells (MQWs) as a function of dislocation density [6]. The deep energy levels and non-radiative recombination centers occurring at dislocation lines were believed to result in the reduction of band edge emission intensity.…”

Section: Dislocations and Near-band Edge Luminescencementioning

confidence: 99%

Optical analysis of dislocation‐related physical processes in GaN‐based epilayers

Jiang

Zhao

Yang

2007

Physica Status Solidi (b)

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In this paper, recent progresses in optical analysis of dislocation-related physical properties in GaN-based epilayers are surveyed with a brief review. The influence of dislocations on both near-band edge emission and yellow luminescence (YL) is examined either in a statistical way as a function of dislocation density or focused on individual dislocation lines with a high spatial resolution. Threading dislocations may introduce non-radiative recombination centers and enhance YL, but their effects are affected by the structural and chemical environment. The minority carrier diffusion length may be dependent on either dislocation density or impurity doping as confirmed by the result of photovoltaic spectra. The in situ optical monitoring of the strain evolution process is employed during GaN heteroepitaxy using an AlN interlayer. A typical transition of strain from compression to tension is observed and its correlation with the reduction and inclination of threading dislocation lines is revealed.

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“…Considering the low reflectivity of the uncoated cavity facets of the LD, this low Characteristics of InGaN multiple quantum well blue-violet laser diodes 731 threshold current density indicates that the MQW active layer had high internal quantum efficiency and low optical loss. Zhang et al [14] revealed by TAXRD and PL measurements that InGaN/GaN MQWs with a longer period grown on a high quality GaN template in our laboratory had less interface roughness and a lower edge dislocation density, and also had a higher PL intensity. These characteristics of the MQWs can give rise to high internal quantum efficiency and low optical loss of the MQW active layer and result in a low threshold current density and high characteristic temperature of the LD.…”

mentioning

confidence: 96%

“…There are several factors that influence the characteristics of such LDs, but the quality of the MQW plays a dominant role in the improvement of the LDs. By the systematic optimization of the MQWs, it is found that MQWs with a longer period have better photoluminescence characteristics [14] . We have realized an LD structure with this kind of MQW, and here we report our results.…”

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confidence: 99%

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Zhang

Wang

et al. 2006

SCI CHINA SER E

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Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm 2 and a characteristic temperature T 0 of 145 K were observed for the laser diode.Keywords: metalorganic chemical vapor deposition (MOCVD), GaN-based laser diodes, multiple quantum well, ridge waveguide, threshold current.Since the demonstration of the first InGaN multiple quantum well laser diode (LD) [1] , GaN-based multiple quantum well laser diodes have attracted a great deal of attention due to their potential applications in high-density optical storage, display, laser printing, and lighting. Many universities and companies have been focusing their research on nitride semiconductors in recent years. Remarkable progress has been achieved in GaN template growth, n-type and p-type doping of GaN, InGaN/GaN multiple quantum well (MQW) growth [2,3] , and AlGaN growth and doping [4,5] . Meanwhile, the techniques for making ohmic contact to n-type and p-type GaN and for the cleaving of wurtzite GaN on sapphire have developed rapidly [6][7][8] . Although several groups have reported the pulsed and continuous-wave operation of InGaN MQW laser diodes at room temperature [9][10][11][12][13] , the growth and fabrication of GaN-based LDs are still challenging, and more research is needed. There are several factors that influence the characteristics of such LDs, but the quality of the MQW plays a dominant role in the improvement of the LDs. By the sys-728 Science in China Series E: Technological Sciences tematic optimization of the MQWs, it is found that MQWs with a longer period have better photoluminescence characteristics [14] . We have realized an LD structure with this kind of MQW, and here we report our results. ExperimentalThe GaN materials and laser structures were grown in a closed-space showerhead metalorganic chemical vapor deposition (MOCVD) reactor. (0001) C-face sapphire was used as substrate. The MQW LDs consisted of a 20 nm-thick GaN buffer layer grown at the low temperature of 550℃, a 5 μm-thick GaN:Si layer, a 0.7 μm-thick Al 0.25 Ga 0.75 N/ GaN:Si superlattice (SL), a 0.1 μm-thick GaN:Si layer, an In 0.15 Ga 0.85 N/In 0.02 Ga 0.98 N MQW structure consisting of five 3 nm-thick undoped In 0.15 Ga 0.85 N well layers separated by 25 nm-thick Si-doped In 0.02 Ga 0.98 N barrier layers, a 20 nm Al 0.2 Ga 0.8 N:Mg layer, a 0.1 μm GaN:Mg layer, a 0.65 μm AL 0.2 Ga 0.8 N/GaN:Mg SL, and a 0.2 μm GaN:Mg layer.The 20 nm Al 0.2 Ga 0.8 N layer served as a blocking layer to prevent electrons from escaping from the active region. The 0.1 μm n-type and p-type GaN layers were light-guiding layers. The 0.7 μm n-type and 0.65 μm p-type AlGaN/GaN SLs ...

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Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

Cited by 55 publications

References 22 publications

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Optical analysis of dislocation‐related physical processes in GaN‐based epilayers

Characteristics of InGaN multiple quantum well blue-violet laser diodes

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Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

Cited by 55 publications

References 22 publications

Optical and Electrical Properties of Au- and Ag-Doped ReSe2

Optical and Electrical Properties of Au- and Ag-Doped ReSe2

Optical analysis of dislocation‐related physical processes in GaN‐based epilayers

Characteristics of InGaN multiple quantum well blue-violet laser diodes

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Product

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Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂