The effects of temperature, pH, and salt concentration on the layer-by-layer (LBL) deposition of sodium poly(styrene sulfonate) (PSS)/poly[2-(dimethylamino)ethyl methacrylate] (PDEM) were investigated by use of a quartz crystal microbalance with dissipation (QCM-D). At pH 4, the frequency change (Deltaf) gradually decreased to a constant, indicating that the polyelectrolyte complexes of the layer were not dissolved. As the layer number increased, the -Deltaf oscillatedly increased, indicating that the thickness of the multilayer increased. At the same time, the dissipation change (DeltaD) oscillatedly increased with the layer number, indicating the chain interpenetration or complexation that led to the alternative swelling-and-shrinking of the outermost layer. For the same layer number, as the temperature increased, the amplitude of DeltaD increased, indicating that the chain interpenetration increased. The thickness also increased with temperature. Further increasing the pH to 7 led to a thicker layer, reflected in the larger amplitude of DeltaD. At pH 10, the polyelectrolytes no longer formed multilayers on the surface because of the lack of electrostatic interactions. On the other hand, the addition of NaCl also led to a thickness increase. The amplitude in DeltaD increased with NaCl concentration, indicating that the chain interpenetration increased. Our experiments indicated that the LBL deposition of polyelectrolytes was dominated by the chain interpenetration. Also, the polyelectrolyte complexes in the layer can redissolve into solution from the surface at a high temperature or a high salt concentration.

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation. The origin of the anomalous increase of integrated PL intensity proved to be associated with the enhancement of carrier drifting because of the increase of carrier mobility in the temperature range from 15 K to 100 K. For non-resonant excitation, carriers supplied from the barriers will influence the temperature dependence of integrated PL intensity of quantum wells, which makes the traditional methods to acquire photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells.

Elevated intraocular pressure (IOP) is the leading cause of glaucoma. As glaucoma is an irreversible neurological eye disease, it is urgent to realize timely and accurate IOP detection for diagnostic and therapeutic purposes. Here, a contact lens sensor for continuous IOP monitoring using self-assembly graphene (SAG), is developed. The combination of face-to-face water transfer printing and micro-electromechanical systems technology can realize the batch preparation of such a sensor. The sensor has good light transmittance and temperature stability. It exhibits an ultra-high IOP sensitivity of 1.0164 mV mm Hg −1 on a silicone eye, and 3.166 mV mm Hg −1 in vitro on the porcine eye with remarkable linearity. The sensitivity of the proposed sensor is high enough to be read by a commercial radio frequency identification read-write system for continuous wireless monitoring of IOP. Furthermore, the as-prepared sensor can work as normal for 24 h in phosphate buffer saline.