Influence of Dislocations onI-V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC

Barbot, J. F.; Blanchard, C.; Demenet, J. L.

doi:10.1002/1521-3951(200011)222:1<159::aid-pssb159>3.0.co;2-i

Cited by 3 publications

(4 citation statements)

References 16 publications

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“…This conclusion is consistent with the study by Skromme [5]. The problem is that, as mentioned in the section of introduction, none of these known defects could be claimed as the main factor controlling the large excess current in highly nonideal diodes [8,[12][13][14][15].…”

Section: Discussionsupporting

confidence: 90%

“…Four types of contact diameters (number of Schottky contacts) were used: 1040 µm (4), 580 µm (5), 280 µm (4) and 120 µm (12). After regular RCA cleaning, the large area ohmic contact on the backside of samples was achieved by sputtering deposition of 200 nm Ni film, followed by rapid thermal annealing (RTA) in N 2 at 1000 °C for 60 seconds.…”

Section: Methodsmentioning

confidence: 99%

“…In order to eliminate the SBH inhomogeneities, a great deal of efforts have been made to identify their original causes [5,8,[12][13][14][15]. One frustrating conclusion is that none of the known defects could be claimed as the main factor controlling SBH inhomogeneities.…”

Section: Introductionmentioning

confidence: 99%

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Investigation on barrier inhomogeneities in 4H‐SiC Schottky rectifiers

Ma¹,

Sadagopan

Sudarshan

2006

Physica Status Solidi (a)

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In order to investigate the Schottky barrier height inhomogeneities in 4H silicon carbide Schottky rectifiers, two surface modification processes were developed to control the influence caused by the surface defects. Both forward and reverse electrical characteristics of Schottky contacts, fabricated on different surface conditions, indicated that the inhomogeneities could be precisely controlled, completely eliminated and exactly duplicated using reactive ion etching and hydrogen-etching surface modification processes. After removing the barrier inhomogeneities, all contacts exhibited a wide linearity region (over nine decades) which can be well explained using thermionic emission theory. The calculated ideality factor n and the Schottky barrier height Φ b were in the range of 1.17 -1.20 and 1.12 eV -1.22 eV respectively. Most contacts exhibited a low reverse leakage, about 10 -6 A/cm 2 at the reverse bias of 300 V. Finally sharp-apex growth pits were proposed as source defects to understand the Schottky barrier height inhomogeneities.

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Section: Discussionsupporting

confidence: 90%

Section: Methodsmentioning

confidence: 99%

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Investigation on barrier inhomogeneities in 4H‐SiC Schottky rectifiers

Ma¹,

Sadagopan

Sudarshan

2006

Physica Status Solidi (a)

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“…After scratching the {001} faces, the cunentvoltage curves show a bulge towards the low forward bias. 34 It is possible to fabricate high-perfmmance GaAs Schottky-bmTier photodiode using a four-pair GaAs/ AlGaAs multilayer reflector structure, which provides both high quantum efficiency and large bandwidth. 35 Low-frequency noise behavior of a metal p-type silicon Schottky barrier diode can be better than that of a metal n-type silicon Schottky barrier diode passivated by with same thermally grown Si0 2 • 36 High speed solar-blind photodiodes with indium-tin-oxide (ITO) Schottky contacts on AlGaN/GaN heterostructures shows that Schottky diode provides low dark cunent and a peak responsibility of 44mA/W at 263nm?…”

Section: Other Characteristics Of Schottky Diodementioning

confidence: 99%

MetalSemiconductor FieldEffect Transistor (MESFET)

Ng¹

2010

Complete Guide to Semiconductor Devices

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Other than I-V characteristics, electrical characteristics analyzed are: electron/hole mobility, electron/hole current density, and space charge. For both types ofMESFETs, the electron mobility is lower at the drain side than the source side. Space charge contours do not show distinct depleted channel. However when compared to a published result, the overall shape of the area covering from source to drain show some similarities.From the simulation experience with TCAD, it is understood that the software has many "powerful" options that can lead to deeper analysis. In this project a general electrical characteristic of an Al-n-type-Si Schottky diode and Al-n-type-Si Schottky-MESFET are achieved.

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