Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Chao, Der-Sheng; Shih, Hua-Yu; Jiang, Jiaxi; Chen, Huang-Chin; Chiang, Ching‐Yu; Ku, Ching−Shun; Yen, Cheng-Tyng; Lee, Lurng-Sheng; Hsu, Fu-Jen; Chu, Kuo-Ting; Hung, Chien‐Ching; Lee, Chwan-Ying

doi:10.7567/1347-4065/aafc9b

Cited by 18 publications

(5 citation statements)

References 25 publications

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“…Power MOSFETs Irradiated at Ultra-High Doses electrons [23]. The DD-induced degradation of electrical characteristics of transistors may be related to [22]: i) carrier removal in the n-type drift region due to generation of deep acceptor centers, and ii) carrier mobility and carrier lifetime degradation due to the generation of Z1/Z2 centers (bandgap position EC-0.68 eV) and related E2 (EC-0.60 eV) and E3 (EC-0.72 eV) energy levels.…”

Section: Radiation-induced Effects In Sic Verticalmentioning

confidence: 99%

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Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

Bonaldo,

Martinella,

Race

et al. 2024

IEEE Trans. Nucl. Sci.

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Section: Radiation-induced Effects In Sic Verticalmentioning

confidence: 99%

“…Most publications investigating displacement damage in 4H-SiC devices, consider SiC junction barrier Schottky (JBS) and SiC PiN diodes structures as SiC radiation detectors [19,20]. Only a few experiments have been performed on 4H-SiC power MOSFETs with protons [21][22], neutrons [22][23] and…”

Section: Introductionmentioning

confidence: 99%

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

Bonaldo,

Martinella,

Race

et al. 2024

IEEE Trans. Nucl. Sci.

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“…Omotoso等 [14] 研究发现注量为8.9×10 11 cm −2 的a离子辐照会导致SiC SBD器件理想因子和串联电阻的显著增大, 经过300 ℃退火后又能大幅恢复. Yang等 [15] 的研究表明注量为1.5×10 10 cm −2 的Si离子辐照会在 SiC SBD器件中引入高密度深能级缺陷, 导致器件肖特基势垒降低、载流子浓度降低. Chao等 [16] 报道了中子位移损伤引起的有效载流子浓度降低导致SiC MOSFET器件的性能退化.…”

Section: 引言unclassified

Study on characteristics of neutron-induced leakage current increase for SiC power devices

Chao¹,

Zhi-Feng²,

Zhang³

et al. 2023

Acta Phys. Sin.

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In this paper, the displacement damage degradation characteristics of silicon carbide (SiC) Schottky barrier diode (SBD) and MOSFET are studied based on 14 MeV neutron irradiation. The experimental results show that neutron irradiation with a total fluence of 1.18×1011 /cm2 will not cause notable degradation of the forward I-V characteristics of the diode, but will lead to a significant increase in the reverse leakage current. A defect with energy level positions of Ec-1.034 eV is observed after irradiation by deep level transient spectroscopy (DLTS) testing, which is corresponding to the neutron-induced defect clusters in SiC. This deep level defect may cause the Fermi level of n-type doping drift region to move toward the mid-gap level. It ultimately result in the reduction of the Schottky barrier and the increase of the reverse leakage current. In addition, neutron-induced gate leakage increase is also observed for SiC MOSFETs. The gate current corresponding to Vgs=15 V after irradiation has increased nearly 3.3 times compared to that before irradiation. The donor type defects introduced by neutron irradiation in the oxide layer result in the alteration of the conductivity mechanism of gate oxygen before and after irradiation. The defects have an auxiliary effect on carrier crossing the gate oxide barrier, which leads to the increase of gate leakage current. The defects introduced by neutron irradiation are neutral after capturing electrons. The trapped electrons can cross a lower potential well and enter the conduction band to participate in conduction when the gate is positively biased, thus causing the gate current to increase with the increase of electric field. After electrons captured by donor type defects enter the conduction band, positively charged defects are left in the gate oxide, leading to the negative shift of the transfer characteristics of SiC MOSFET. The results of DLTS testing indicate that neutron irradiation can not only cause changes in the intrinsic defect state of SiC materials near the channel of MOSFET, but also introduce new silicon vacancy defect. However, these defects are not the main cause of device performance degradation due to their low density relative to the intrinsic defects.

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“…It can be seen that with an increase in the irradiation fluence, the I B of the BJTs gradually increases, and the 028502-2 I C hardly changes, indicating that the influence of radiation on the electrical performance of BJTs is mainly concentrated in I B , while I C is insensitive to radiation. [12] 0. The excess base current ∆I B is an important parameter that characterizes the change in the base current of BJTs, and it is also an important basis for an in-depth study of the particle radiation damage mechanism.…”

Section: Electrical Characteristicsmentioning

confidence: 99%

Radiation effects of 50-MeV protons on PNP bipolar junction transistors

Huang¹,

Cui²,

Yang³

et al. 2022

Chinese Phys. B

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The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.

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Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Cited by 18 publications

References 25 publications

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

Study on characteristics of neutron-induced leakage current increase for SiC power devices

Radiation effects of 50-MeV protons on PNP bipolar junction transistors

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