Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

Bonaldo, S.; Martinella, C.; Race, S.; Für, N.; Mattiazzo, S.; Bagatin, M.; Gerardin, S.; Paccagnella, A.; Grossner, U.

doi:10.1109/tns.2024.3366190

IEEE Trans. Nucl. Sci.

2024

DOI: 10.1109/tns.2024.3366190

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Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

S. Bonaldo,

C. Martinella,

S. Race

et al.

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2024

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Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design

Martinella,

Race,

Für

et al. 2024

IEEE Trans. Nucl. Sci.

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SiC power MOSFETs with trench-gate structure have been irradiated with heavy-ion broad-beam and microbeam. Microdose effects resulting in higher subthreshold drain leakage were observed when irradiating the devices at low drain-source voltages and reported for the first time for SiC power devices. Increasing the drainsource bias during the exposure, single-event leakage current (SELC), characterized by microbreaks in the gate oxide was measured. The accumulation of microbreaks eventually led to a complete gate rupture. The differences with respect to the SiC planar-gate MOSFETs and the impact of these results on the testing procedures for the two technologies are discussed.

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Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design

Martinella,

Race,

Für

et al. 2024

IEEE Trans. Nucl. Sci.

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show abstract

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Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses

Cited by 1 publication

References 53 publications

Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design

Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design

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