Influence of dopants in the buffer layer on CZTS solar cell performance

Abstract

CZTS (Copper zinc Tin Sulphide) has commanded the next-generation solar-cell material because of its superior performance, lower cost, and abundant availability on the earth. This study examined the impact of different dopants in the buffer layer on the solar cells’ electrical characteristics. For the n-ITO/CdS (Ag-CdS, Cu-CdS, and Cl-CdS)/CZTS/ Mo proposed device structure of the solar cell, the doping concentration and thickness of the buffer and absorber layers were examined. Ag-CdS buffer layer was shown to be one of the best options for manufacturing a buffer layer for a CZTS-based solar cell in this study. The doping concentration and thickness of the solar cell have been optimized in this work. This work gives more than 21 % efficiency by using Ag-CdS as a dopant in the CdS buffer layer. The numerical modelling of the proposed structure reveals a unique method for improving the efficiency of the CZTS solar cell. The findings of this study are expected to utilize in the interest of the many researchers working in this field.

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

“…36 The N D and thickness of the CZTS layer were adjusted from 1 μm to 5 μm and 10 16 cm À3 to 10 19 cm À3 , respectively. The results demonstrate that for carrier concentrations more than 10 17 cm À3 , the V oc was almost entirely distinct from the 1Â10 16 and 5Â10 18 cm À3 , the FF was nearly constant and was not affected by the absorber's thickness. When the carrier concentration for the absorber reached 4Â10 18 cm À3 , which is associated with the area where the device exhibits an acceptable efficiency, we saw that all PV performances of the device, including V oc , FF, and PCE, were rising.…”

“…The increase in scattering and defects in the buffer layer with varying In 2 Se 3 thickness and donor density is responsible for the actions of J sc . 16 Furthermore, increased photon absorption in the thick In 2 Se 3 buffer layer reduces the absorption of light in the absorber layer, which may also impair the output parameters. In this study, the PCE is maximum at a thickness of 0.09 μm, but it is very complicated to fabricate such a thin layer, which is why the value is taken at 0.100 μm and the carrier concentration at 10 16 cm À3 .…”

“…In this study, the PCE is maximum at a thickness of 0.09 μm, but it is very complicated to fabricate such a thin layer, which is why the value is taken at 0.100 μm and the carrier concentration at 10 16 cm À3 . 16,38…”

“…With a constant thickness of 4.0 μm for the CZTS absorber layer and N t of 10 14 cm À3 , the optimized value of PCE 32.94% has been obtained. 8,16,31,34…”

“…15 With the structure CZTS/WS2/In2Se3, Kumar Dakua P et al have obtained a PCE of 22.96%. 16 Using Ag2S quantum dot material as a buffer layer for CIGS SCs, Kumar S et al reported PCE of 26.12% and V oc of 1.08 V. 17 Using ZnS as a buffer layer and SnS as a back surface field (BSF) layer, P. Chauhan et al have reported PCE of 18.18%, V oc of 0.78 V, J sc of 27.78 mA/cm 2 , and FF of 83.07%. 18 The aim of the present study is to boost the parameters of SC by declining the recombination rate at the buffer layer.…”