CZTS (Copper zinc Tin Sulphide) has commanded the next-generation solar-cell material because of its superior performance, lower cost, and abundant availability on the earth. This study examined the impact of different dopants in the buffer layer on the solar cells’ electrical characteristics. For the n-ITO/CdS (Ag-CdS, Cu-CdS, and Cl-CdS)/CZTS/ Mo proposed device structure of the solar cell, the doping concentration and thickness of the buffer and absorber layers were examined. Ag-CdS buffer layer was shown to be one of the best options for manufacturing a buffer layer for a CZTS-based solar cell in this study. The doping concentration and thickness of the solar cell have been optimized in this work. This work gives more than 21 % efficiency by using Ag-CdS as a dopant in the CdS buffer layer. The numerical modelling of the proposed structure reveals a unique method for improving the efficiency of the CZTS solar cell. The findings of this study are expected to utilize in the interest of the many researchers working in this field.

CZTS is a potential absorber material and received a lot of focus because of its excellent optoelectronic properties. To improve the functionality of CZTS-based solar cells, this study examines the potential HTLs (MoTe2, Cu2O, and SnS) and their contribution to the better performance of the device. HTL improves the overall performance of the device by decreasing the recombination rate at the back contact and photon energy absorption. The impact of the various device parameters such as absorber layer thickness, defect densities, contact work functions, shunt and series resistances (RSh and Rs), and the temperature of the device are briefly examined in this work. The research shows that Cu2O and SnS are more emerged HTLs rather than MoTe2. The device achieved a PCE of 23 % and a FF of 74 %. The results show that the addition of these HTLs significantly improved the Voc, Jsc, and FF, all of which are within the Shockley-Queasier limits. This study points to the possibility of producing more efficient CZTS heterojunction-based solar cells.

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With a high absorption coefficient and tunable bandgap CZTS (Copper Zinc Tin Sulfide) makes it suitable for photovoltaic applications. Present paper deals with the simulation and modeling of CZTS-based solar cells using tungsten disulfide (WS2) as the buffer layer and CZTS2 as the back surface field (BSF) layer to study the performance of the solar cell. Considering different physical and geometrical parameters such as thickness, acceptor density, interfacial defect density, and metal contact work functions the device calibration has been done. The temperature is varied from 300 K to 400 k to study the impact on device performance. The C-V and 1/C2 plot is presented to calculate the built-in voltage for the device. The series (Rs) and shunt (Rsh) resistance of 1 and 106 ohm.cm2 were kept throughout the simulation. The optimized thickness for the absorber, BSF, buffer, and window layers are 800 nm, 140 nm, 30 nm, and 90 nm respectively. The obtained results are validated using the experimental results available in the literature. Varying the values of different parameters, the optimal efficiency of 26 % was reported in this work. Contrary to conventional solar cells, which contain expensive and toxic elements, WS2 may be a good option as a buffer layer in CZTS solar cells.

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