Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Arteev, D. S.; Sakharov, A. V.; Lundin, W. V.; Заварин, Е. Е.; Zakheim, D. A.; Tsatsulnikov, A. F.; Gindina, M. I.; Brunkov, P. N.

doi:10.1088/1742-6596/1697/1/012206

Cited by 7 publications

(8 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…(1) Fe, mainly originating from a ferrocene precursor (Cp 2 Fe, bis(cyclopentadienyl)iron), is a compensational deep-level dopant that produces a highly resistive Fe-doped buffer of GaN-based HEMTs by MOCVD [137]. The Fe-doped buffer layer is located at +0.5 to +0.7 eV (figure 6(b)) below the conduction band [138,139]. Studies suggest that a highly resistive (>1 GΩ sq −1 ) GaN-on-Si can usually be achieved at lower Fe concentrations in the range of 10 17 cm −3 as shown by secondary ion mass spectroscopy (SIMS) measurements [36,131].…”

Section: High-resistance Gan Buffer Structurementioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

show abstract

Section: High-resistance Gan Buffer Structurementioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The Fe segregation propagates and accumulates on the surface during growth, deteriorating surface morphology and crystalline quality [ 10 , 24 ]. Moreover, these Fe atoms tend to diffuse into the GaN channel and cause the capture of conducting electrons during the on/off device switching operation, further resulting in current collapse and high R ON [ 23 , 25 ]. Several groups proposed different approaches for solving this Fe diffusion issue [ 10 , 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, these Fe atoms tend to diffuse into the GaN channel and cause the capture of conducting electrons during the on/off device switching operation, further resulting in current collapse and high R ON [ 23 , 25 ]. Several groups proposed different approaches for solving this Fe diffusion issue [ 10 , 25 , 26 , 27 ]. A u-GaN buffer layer was inserted between the GaN channel and the Fe-doped buffer to reduce the effect of Fe diffusion and avoid impact on device characteristics [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

et al. 2022

View full text Add to dashboard Cite

The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). The heavy Fe concentrations employed for the purpose of highly insulating buffer resulted in Fe segregation and 3D island growth, which played the role of a nano-mask. The in situ reflectance measurements revealed a transition from 2D to 3D growth mode during the growth of a heavily Fe-doped GaN:Fe layer. The 3D growth mode of Fe nano-mask can effectively annihilate edge-type threading dislocations and improve transfer properties in the channel layer, and consequently decrease the vertical leakage current by one order of magnitude for the applied voltage of 1000 V. Moreover, the employment of GaN:C film on GaN:Fe buffer can further reduce the buffer leakage-current and effectively suppress Fe diffusion.

show abstract

“…Experiments to obtain inter-device isolation were carried out on the IBS IMC200 ion doping plant. Samples of AlGaN/AlN/GaN heterostructures on silicon with a doped and undoped transition layer (buffer) from the substrate were taken [9]. AlGaN layer thickness was 25 nm, Al concentration was 25%.…”

mentioning

confidence: 99%

Study of nitrogen ion implantation through Si3N4 layer for GaN on Si power HEMTs isolation process

Егоркин

Obolenskiy

Zemlyakov

et al. 2022

Technical Physics Letters

View full text Add to dashboard Cite

This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si3N4 layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage. Keywords: ion implantation, breakdown voltage, GaN, power transistor.

show abstract

Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Cited by 7 publications

References 47 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

Study of nitrogen ion implantation through Si3N4 layer for GaN on Si power HEMTs isolation process

Contact Info

Product

Resources

About