Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

Dorp, Dennis H. van; Otter, J.H. den; Hijnen, Niek; Bergmeijer, Menno; Kelly, John J.

doi:10.1149/1.3115404

Cited by 4 publications

(1 citation statement)

References 27 publications

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“…Compared with bulk SiC, the photoluminescence intensity of porous SiC was significantly improved. In the work of Dao et al, 31 nanoporous SiC was also obtained by electrochemical etching, and porous SiC with different characteristics was obtained by using different HF concentrations and etching durations, the photoluminescence of porous SiC with different characteristics was compared, similar to the research findings of Dorp et al, 32 porous SiC all exhibited enhanced photoluminescence intensity (Fig. 5).…”

Section: Electrochemical Etching Of Sicsupporting

confidence: 72%

Review—Progress in Electrochemical Etching of Third-Generation Semiconductors

Chen

et al. 2023

ECS J. Solid State Sci. Technol.

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Third-generation semiconductors have richer and better properties than traditional semiconductors, and show promising application prospects in high-power, high-temperature, high-frequency, and optoelectronic devices. Therefore, they have gained increasing interest and received extensive research attention in recent years. Electrochemical etching plays an important role in exploring the properties of third-generation semiconductors and related device fabrication. This paper systematically reviews the electrochemical etching process of silicon carbide and gallium nitride which are the typical representative of the third-generation semiconductors. Through subdividing the electrochemical etching approach into anodic oxidation etching, photoelectrochemical etching, and electroless photoelectrochemical etching, the mechanism of each electrochemical etching method is expounded, the influences of various etching parameters on the etching results are discussed, and the related applications of electrochemical etching in characterizing crystal defects, processing micro-nano structures, and fabricating microelectronic devices are summarized. Finally, future development in achieving more efficient electrochemical etching is briefly discussed. In general, this paper provides a systematic review of the electrochemical etching of third-generation semiconductors, which is helpful for researchers to supplement the content in this field, and even non-researchers in this field will be able to familiarize themselves with the relevant content quickly.

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Section: Electrochemical Etching Of Sicsupporting

confidence: 72%