Influence of emitter position of silicon heterojunction photovoltaic solar cell modules on their potential-induced degradation behaviors

Yamaguchi, Seira; Yamamoto, Chiyo; Ohshita, Yoshio; Ohdaira, Keisuke; Masuda, Atsushi

doi:10.1016/j.solmat.2020.110716

Cited by 16 publications

(19 citation statements)

References 29 publications

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“…However, rear‐emitter SHJ cells show Na‐penetration‐type PID, which is characterized by reduced V oc and J sc . [ 41,43 ] This behavior resembles that of IBC and rear‐emitter n‐type cells. Considered together, these results demonstrate that the emitter position affects the Na‐penetration‐type PID behavior.…”

Section: Na‐penetration‐type Pidmentioning

confidence: 68%

“…Front‐emitter SHJ PV cell modules show Na‐penetration‐type PID, which is characterized by a reduction in the FF. [ 43 ] This degradation behavior resembles that of front‐emitter n‐type PERT cells. However, rear‐emitter SHJ cells show Na‐penetration‐type PID, which is characterized by reduced V oc and J sc .…”

Section: Na‐penetration‐type Pidmentioning

confidence: 72%

“…In SHJ PV modules, corrosion‐type PID is the main PID mode. [ 40–43 ] It must also be emphasized that corrosion‐type PID is a Na‐related phenomenon. Section 6 specifically addresses corrosion‐type PID.…”

Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

“…PV modules fabricated from SHJ cells (Figure 3d) also show Na‐penetration‐type PID. [ 41,43 ] However, Na‐penetration‐type PID might not be the main PID mode in SHJ cells because they require a long time and high voltage to generate Na‐penetration‐type PID in SHJ PV cells. In this case, Na should be introduced into the surface region of the c‐Si wafer.…”

Section: Na‐penetration‐type Pidmentioning

confidence: 99%

“…Some reports have described PID in PV modules fabricated from n‐type c‐Si cells, such as passivated emitter and rear totally diffused (PERT) cells, [ 16–30 ] passivated emitter and rear locally diffused (PERL) cells, [ 31 ] TOPCon cells, [ 32 ] rear‐emitter c‐Si PERT cells (with the junction not at the front‐glass side), [ 18,33,34 ] IBC cells, [ 15,35–39 ] and Si heterojunction (SHJ) cells. [ 40–43 ] According to these many studies, n‐type c‐Si PV cell modules show PID with different mechanisms from those in p‐type cells. This point has also been reported from some comparative studies.…”

Section: Introductionmentioning

confidence: 99%

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Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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n‐Type crystalline‐silicon (c‐Si) photovoltaic (PV) cell modules attract attention because of their potential for achieving high efficiencies. The market share of n‐type c‐Si PV modules is expected to increase considerably, with wide use in PV systems, including large‐scale PV systems, for which the system bias is set as markedly high. Such a high system bias leads to performance losses known as potential‐induced degradation (PID). By virtue of many researchers’ efforts, the PID behaviors, mechanisms, and preventive measures against PID have been well documented in conventional p‐type c‐Si modules. Researchers recently started to investigate PID in high‐efficiency c‐Si solar cells including n‐type c‐Si PV modules. Yet, the understanding of PID phenomena remains incomplete. Herein, a literature review of PID in high‐efficiency n‐type c‐Si PV modules is provided as a resource elucidating the current status of related research and remaining unresolved issues. This report mainly presents discussion of PID in several kinds of n‐type c‐Si PV modules in terms of materials science. PID phenomena are described as divided into some degradation modes. Details present a review of their respective degradation modes, degradation behaviors, proposed mechanisms, and potential measures against degradation. Remaining open issues and anticipated future studies are also summarized.

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Section: Na‐penetration‐type Pidmentioning

confidence: 68%

Section: Na‐penetration‐type Pidmentioning

confidence: 72%

Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

Section: Na‐penetration‐type Pidmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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Performance degradation assessment of the three silicon PV technologies

Adar

Najih

Chebak

et al. 2022

Progress in Photovoltaics

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This study investigates seasonal performance and assesses the annual degradation rates (RD), of three types of silicon‐based PV module technologies, using four statistical methods, namely, linear regression (LR), classical seasonal decomposition (CSD), Holt‐Winters exponential smoothing (HW), and autoregressive integrated moving average (ARIMA) on a 5‐year temperature‐corrected DC‐performance ratio time series. The lowest performance degradation rates being exhibited are found for the polycrystalline silicon (pc‐Si) system with a RD values confined between 0.23%/year and 0.36%/year. The RD values provided by the four statistical methods to the monocrystalline silicon (mc‐Si) PV modules range from 0.40%/year to 0.77%/year. The values attributed to the annual performance degradation rate of PV modules of amorphous silicon technology typically range from 0.31%/year to 0.57%/year.

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Long‐term performance and reliability of silicon heterojunction solar modules

Arruti

Virtuani

Ballif

2023

Progress in Photovoltaics

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The high-efficiency silicon heterojunction (SHJ) technology is now perceived mature enough to enter the Giga-Watt manufacturing scale with several players around the globe. The growth of the SHJ technology requires confidence from manufacturers, investors, and system developers about its reliability and long-term performance. In this work, we perform a literature survey collecting performance data (and performance loss rates [PLRs]) published for SHJ modules. Publications on this specific subject are still limited; however, enough available data exist to drive some preliminary conclusions. Despite a long list of caveats specific to this type of meta-analysis, when considering all published datasets, we obtain for SHJ modules median and average PLR values of 0.56%/year and 0.70%/year, respectively. These numbers are in line with PLR generally reported for field-deployed crystalline silicon (c-Si modules). We then apply a filtering procedure to distinguish what we perceive to be high-accuracy datasets from less accurate ones. This methodology is understandably arbitrary, but

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Influence of emitter position of silicon heterojunction photovoltaic solar cell modules on their potential-induced degradation behaviors

Cited by 16 publications

References 29 publications

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Performance degradation assessment of the three silicon PV technologies

Long‐term performance and reliability of silicon heterojunction solar modules

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