Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

Wang, Huining; Ji, Ziwu; Qu, Shuang; Wang, Gang; Jiang, Yongzhi; Liu, Baoli; Xu, Xiangang; Mino, H.

doi:10.1364/oe.20.003932

Cited by 157 publications

(148 citation statements)

References 29 publications

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“…The blue-shift of 1.8 nm with increasing I inject can be explained by the QCSE and band-filling effect. [1][2][3][23][24][25][26][27][28] For $430 nm polar and $425 nm (10 11) InGaN LEDs, 29 blue-shifts of 3.5 nm and 1.5 nm have been reported, respectively. This smaller blue-shift value of the (10 11) InGaN LED was attributed mainly to a weaker QCSE than the polar LED.…”

Section: Resultsmentioning

confidence: 99%

“…25,[53][54][55] However, it has been found that a strong ELOC can effectively reduce the QW excitons from being trapped into TDs, resulting in an enhanced luminescence efficiency from InGaN based devices. 23,[25][26][27] Despite the strong ELOC (Fig. 5), the IQE values of the PSS-LED (and Bulk-LED) are much smaller than values reported for polar samples, which were grown on either higher-or comparable-TDD GaN/sapphire substrates.…”

Section: Discussionmentioning

confidence: 99%

“…A similar finding has been previously reported for (11 22) In x Ga x N QWs (0.13 x 0.35). 27,28 To estimate the ELOC degree of both samples, a modified Varshni empirical expression 24,[26][27][28] was used to fit the E PL values within the temperature range of 160-400 K. The estimated ELOC degree of both samples was about 40 meV. This ELOC degree is higher than the values of $12-24 meV previously reported for $460 nm polar MQW.…”

Section: B Optical Propertiesmentioning

confidence: 96%

“…The higher In-incorporation InGaN regions, e.g., the red-shifted areas should act as ELOC areas in which diffusing carriers can be trapped. [23][24][25][26][27][28] The ELOC areas in the PSS-LED are darker, which can explain its lower IQE in comparison with the Bulk-LED where ELOC areas are brighter.…”

Section: B Optical Propertiesmentioning

confidence: 99%

See 3 more Smart Citations

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Dinh

Corbett

Parbrook

et al. 2016

Journal of Applied Physics

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We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (112¯2) GaN substrate (Bulk-GaN) and a low-cost large-size (112¯2) GaN template created on patterned (101¯2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼105 cm−2–106 cm−2 and basal-plane stacking fault (BSF) density of 0 cm−1, while the PSS-GaN substrate has the TDD of ∼2 × 108 cm−2 and BSF density of ∼1 × 103 cm−1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: B Optical Propertiesmentioning

confidence: 96%

Section: B Optical Propertiesmentioning

confidence: 99%

See 2 more Smart Citations

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Dinh

Corbett

Parbrook

et al. 2016

Journal of Applied Physics

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“…Experimental studies on c-plane (In,Ga)N/GaN QW systems reveal that random alloy fluctuations lead to carrier localization effects, which can dominate the electronic and optical properties of these structures [23,24]. Clear experimental indications of the importance of alloy fluctuations on the properties of nonpolar (In,Ga)N QWs have also been presented [16,21,22].…”

Section: Introductionmentioning

confidence: 99%

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Schulz¹,

Tanner

O’Reilly

et al. 2015

Phys. Rev. B

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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an m-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.

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Tuning Photoluminescence of CsPbBr₃ Quantum Dots through Plasmonic Nanofingers

Xiao

et al. 2023

Advanced Optical Materials

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All‐inorganic perovskites have recently drawn considerable attention due to their excellent optoelectronic properties. With the help of gap‐plasmon nanostructures, the optical properties of perovskites can be tuned through the coupled near‐field. Here, the optical coupling between CsPbBr3 quantum dots (QDs) and gap‐plasmon through placing QDs in a 2‐nm tetrahedral amorphous carbon gap region of collapsible Ag nanofingers is demonstrated. Compared to the CsPbBr3 QDs on SiO2, the photoluminescence (PL) of CsPbBr3 QDs on collapsed nanofinger is enhanced by 4 times and the lifetime decreases from 11.04 to 3.8 ns. A Purcell‐enhanced emission can be achieved by combining QDs and plasmonic nanofingers. In addition, the intensity of PL can be manipulated by the polarization of incident light because of the different polarization responses of dimer nanofingers. More importantly, PL intensity shows a quadric dependence on the incident power and lasing‐like PL spectra can be observed at room temperature by continuous‐wave laser excitation. Such observations can be ascribed to the strong coupling between CsPbBr3 QDs and surrounding Ag nanofingers. This finding indicates that it is possible to achieve lasing‐like PL through coupling CsPbBr3 QDs to the near‐field of plasmonic nanostructures, which can enrich the applications of CsPbBr3 QDs in nanolasing devices.

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Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

Cited by 157 publications

References 29 publications

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Tuning Photoluminescence of CsPbBr₃ Quantum Dots through Plasmonic Nanofingers

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Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

Cited by 157 publications

References 29 publications

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Tuning Photoluminescence of CsPbBr3 Quantum Dots through Plasmonic Nanofingers

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Product

Resources

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Tuning Photoluminescence of CsPbBr₃ Quantum Dots through Plasmonic Nanofingers