Influence of fast neutron and gamma irradiation on the thermoelectric properties of n-type and p-type SiGe alloy

Li, Yixiao; Li, Jing; Du, Jinfeng; Han, Jun; Xiang, Qingpei; Zhang, Chuanfei

doi:10.1016/j.jnucmat.2019.151856

Cited by 6 publications

(3 citation statements)

References 28 publications

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“…In fact, the reduction of the concentration of point defects after annealing has also been reported previously [65,67]. A similar effect has also been observed for the neutron-irradiated SiGe [70]. In addition, it should be pointed out that the as-prepared Mg 3 Sb 2based samples also show similar restoration of electrical conductivity during the heat and cooling cycles of the measurements [71].…”

Section: Neutron Irradiationsupporting

confidence: 84%

Revealing the Defect-Dominated Electron Scattering in Mg ₃ Sb ₂ -Based Thermoelectric Materials

et al. 2022

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The thermoelectric parameters are essentially governed by electron and phonon transport. Since the carrier scattering mechanism plays a decisive role in electron transport, it is of great significance for the electrical properties of thermoelectric materials. As a typical example, the defect-dominated carrier scattering mechanism can significantly impact the room-temperature electron mobility of n-type Mg3Sb2-based materials. However, the origin of such a defect scattering mechanism is still controversial. Herein, the existence of the Mg vacancies and Mg interstitials has been identified by synchrotron powder X-ray diffraction. The relationship among the point defects, chemical compositions, and synthesis conditions in Mg3Sb2-based materials has been revealed. By further introducing the point defects without affecting the grain size via neutron irradiation, the thermally activated electrical conductivity can be reproduced. Our results demonstrate that the point defects scattering of electrons is important in the n-type Mg3Sb2-based materials.

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Section: Neutron Irradiationsupporting

confidence: 84%

Revealing the Defect-Dominated Electron Scattering in Mg ₃ Sb ₂ -Based Thermoelectric Materials

et al. 2022

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“…Electron irradiations mostly determine an introduction of point radiation defects ( Table 2 ). It had been shown [ 19 ] that gamma irradiations of 10 kGy dose did not change significantly the conductivity of the SiGe material, while neutron irradiations sharply decreased material conductivity to 0.14% of non-irradiated material. As shown in [ 18 ], the same type of radiation defects in Si and SiGe alloys are introduced by hadron irradiations in the range of moderate energy and fluence.…”

Section: Recorded Characteristics and Extracted Parametersmentioning

confidence: 99%

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys

et al. 2022

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Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of the upgraded strip tracker will be based on the p-type silicon doped with boron. In this work, minority carrier traps in p-type silicon (Si) and silicon–germanium (Si1−xGex) alloys induced by 5.5 MeV electron irradiation were investigated by combining various modes of deep-level transient spectroscopy (DLTS) and pulsed technique of barrier evaluation using linearly increasing voltage (BELIV). These investigations were addressed to reveal the dominant radiation defects, the dopant activity transforms under local strain, as well as reactions with interstitial impurities and mechanisms of acceptor removal in p-type silicon (Si) and silicon–germanium (SiGe) alloys, in order to ground technological ways for radiation hardening of the advanced particle detectors. The prevailing defects of interstitial boron–oxygen (BiOi) and the vacancy–oxygen (VO) complexes, as well as the vacancy clusters, were identified using the values of activation energy reported in the literature. The activation energy shift of the radiation-induced traps with content of Ge was clarified in all the examined types of Si1−xGex (with x= 0–0.05) materials.

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“…The in-core irradiation effect on bulk thermoelectric materials like germanium telluride, silicon-germanium, etc. has been studied, [2][3][4][5][6] most under the comparatively low neutron uences of 10 13 to 10 19 n cm −2 . Neutron irradiation at relatively low temperatures (<200 C) created irradiation-induced point defects in these materials, reducing carrier mobility and lowering thermoelectric performance.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of high-performance n-type lead telluride measured insitu in a nuclear reactor core

et al. 2022

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Influence of fast neutron and gamma irradiation on the thermoelectric properties of n-type and p-type SiGe alloy

Cited by 6 publications

References 28 publications

Revealing the Defect-Dominated Electron Scattering in Mg ₃ Sb ₂ -Based Thermoelectric Materials

Revealing the Defect-Dominated Electron Scattering in Mg ₃ Sb ₂ -Based Thermoelectric Materials

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys

Thermoelectric properties of high-performance n-type lead telluride measured insitu in a nuclear reactor core

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Influence of fast neutron and gamma irradiation on the thermoelectric properties of n-type and p-type SiGe alloy

Cited by 6 publications

References 28 publications

Revealing the Defect-Dominated Electron Scattering in Mg 3 Sb 2 -Based Thermoelectric Materials

Revealing the Defect-Dominated Electron Scattering in Mg 3 Sb 2 -Based Thermoelectric Materials

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys

Thermoelectric properties of high-performance n-type lead telluride measured insitu in a nuclear reactor core

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Revealing the Defect-Dominated Electron Scattering in Mg ₃ Sb ₂ -Based Thermoelectric Materials

Revealing the Defect-Dominated Electron Scattering in Mg ₃ Sb ₂ -Based Thermoelectric Materials