2009
DOI: 10.1016/j.matchemphys.2008.09.005
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Influence of Fe doping on nanostructures and photoluminescence of sol–gel derived ZnO

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Cited by 103 publications
(45 citation statements)
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“…The first is the blue band at 367nm and the second is the orange-red band at 645nm. The blue emission at 376nm is attributed to the defect-related emission, particularly interstitial zinc defects [18]. For the ZnFe2O4 nanocomposite samples, a second emission band in the yellow-orange region centred at about 647nm is observed, which is significantly contributed to by the Fe-Zn phase [19].…”
Section: Absorption Spectroscopymentioning
confidence: 90%
“…The first is the blue band at 367nm and the second is the orange-red band at 645nm. The blue emission at 376nm is attributed to the defect-related emission, particularly interstitial zinc defects [18]. For the ZnFe2O4 nanocomposite samples, a second emission band in the yellow-orange region centred at about 647nm is observed, which is significantly contributed to by the Fe-Zn phase [19].…”
Section: Absorption Spectroscopymentioning
confidence: 90%
“…Photoluminescence spectra of all the four samples of AZO recoded at an excitation wavelength of 320 nm are shown in Figure 5b. Four bands [2] were seen in all spectra and these have assigned as follows: 1) 377 nm (3.29 eV): excitonic emission due to the recombination of excited electron with a hole to form a pair of exciton in the valence band, 2) 425 nm (2.91 eV): transition between conduction band (CB) and zinc vacancy (V zn ), 3) 455 nm (2.72 eV): A transition between exciton level (E) and interstitial oxygen (Oi) and 4) 525 nm (2.36 eV): a transition between V o Zn i and valence band. V o represents oxygen vacancies.…”
Section: (C) Bright Field Micrograph and (D) Lattice Scale Image Of Amentioning
confidence: 99%
“…Oxide nanostructures of ZnO [1][2][3], WO 3 [4] and TiO 2 [5] are of great interest due to their tunable microstructure, phase transformation capability and quantum confinement, required for multifunctional usage. Of the lot, ZnO is an n-type wide band gap semiconductor (E g ~ 3.3 eV) with a wurtzite hexagonal-crystal structure with excellent chemical and thermal stability, large exciton binding energy (60 meV), large electron mass ~ 0.3 m e (m e : Bare electron mass) and a large exciton emissivity at room temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…Indeed, MON has emerged as a new generation of building block materials which is beyond the conventional chemicals and expedite broad applications of the materials to modern optoelectronics and biomedical engineering, which generates the possibility of constructing nanoscale electric, optoelectronic devices and biological nanoprobes. Additionally, electrical conduction behaviour of semiconducting MON and excellent proton conductivity of insulating MON commonly changes at different oxygen partial pressure environments and by their dissociation of protons, making them promising component materials for a wide range of ecofriendly applications, including sensors, nanoenergy storage and conversion, optical displays, fuel cells and solar cells [51][52][53][54][55][56][57][58][59][60][61][62] . Moreover, various relevant existing and potential applications for MON systems make them highly attractive to researchers in worldwide.…”
Section: Introductionmentioning
confidence: 99%