2019
DOI: 10.1016/j.vacuum.2018.12.031
|View full text |Cite
|
Sign up to set email alerts
|

Influence of film thickness variation on the photo electrochemical cell performances of Ag3SbS3 thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
6
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 13 publications
(6 citation statements)
references
References 27 publications
0
6
0
Order By: Relevance
“…Even though the Cu-Bi-S family can have several possible phases, namely, Cu 3 BiS 3 , CuBiS 2 , CuBi 3 S 3 , and Cu 4 Bi 4 S 9 [18,28], Wittichenite-phase Cu 3 BiS 3 (3:1:3) (and its offstoichiometric chemical compositions [22]) is one of the most studied due to its high optical absorption coefficient ≥10 5 cm −1 and reported band gap energies close to 1.4 eV, making it particularly suitable for thin film PV devices [5,18,[28][29][30]. Table 1 summarizes the most relevant properties of CBS.…”
Section: Structure and Properties Of Cu 3 Bismentioning
confidence: 99%
See 1 more Smart Citation
“…Even though the Cu-Bi-S family can have several possible phases, namely, Cu 3 BiS 3 , CuBiS 2 , CuBi 3 S 3 , and Cu 4 Bi 4 S 9 [18,28], Wittichenite-phase Cu 3 BiS 3 (3:1:3) (and its offstoichiometric chemical compositions [22]) is one of the most studied due to its high optical absorption coefficient ≥10 5 cm −1 and reported band gap energies close to 1.4 eV, making it particularly suitable for thin film PV devices [5,18,[28][29][30]. Table 1 summarizes the most relevant properties of CBS.…”
Section: Structure and Properties Of Cu 3 Bismentioning
confidence: 99%
“…CBS presents excellent thermal stability above room temperature [5,21], along with high optical absorbance in the visible region ≥10 5 cm −1 and a direct optical band gap energy (E g ) occasionally reported around 1.4 eV, properties comparable to those of CIGS and CZTS [22]. Additionally, there is evidence of hole trapping, which facilitates an extended lifetime of electrons in the conduction band [23].…”
Section: Introductionmentioning
confidence: 97%
“…Copper sulphide thin films were prepared in the presence of amino acid [57]. Morphology and structure studies showed the nanoflake particle with hexagonal structure of complexing agent (amino acid).…”
Section: Figure 1: Atomic Layer Deposition Techniquementioning
confidence: 99%
“…The obtained films could be used in the solar control device, holographic, laser device 10 , sensor devices 11 , solar cell [12][13][14][15] and other optoelectronic devices 16 . The metal chalcogenide thin films have been produced by using different deposition techniques [17][18][19][20][21][22] such as electro deposition, spray pyrolysis, radio frequency sputtering, chemical vapour deposition, thermal evaporation, chemical bath deposition, solvo-thermal method, and successive ionic layer adsorption and reaction (SILAR) method.…”
Section: Introductionmentioning
confidence: 99%