Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

Kahraman, Ayşegül; Deevi, S.C.; Yılmaz, Ercan

doi:10.1007/s10853-020-04531-8

Cited by 31 publications

(14 citation statements)

References 164 publications

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“…Prior to annealing, the pattern consisted of only one Si peak. At low temperatures, a single peak is attributed to atoms not possessing sufficient mobility/energy to cause crystallization [6]. After annealing, another Si peak evolved and it became stronger as the annealing temperature increased.…”

Section: Resultsmentioning

confidence: 99%

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Kimbugwe¹,

Karaçalı²,

Yılmaz³

2020

RAP Conference Proceedings

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In this study, the structural and electrical characteristics of the Al/Al2O3/SiO2/n-Si Metal-Oxide-Semiconductor (MOS) structure were investigated. Al2O3 films were deposited on the n-type Si wafer by RF magnetron sputtering after the growth of SiO2 by dry oxidation. The fabricated Al2O3/SiO2/n-Si structures were annealed at 250 o C, 450 o C, and 750 o C in a N2 ambient. XRD and AFM measurements were conducted in order to examine the crystallinity and the surface topography of the Al2O3/SiO2/n-Si structure. Aluminum (Al) front and back contacts were then deposited by RF magnetron sputtering. C-V and G/w-V measurements were performed at low and high frequencies with the aim of analyzing the electrical characteristics. The discrepancy in the C-V curves for different frequencies stemmed from the defects and dangling bonds at the interfaces and in the oxide layers.

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Section: Resultsmentioning

confidence: 99%

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Kimbugwe¹,

Karaçalı²,

Yılmaz³

2020

RAP Conference Proceedings

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“…We also found that there is some fluctuation in the accumulation region. This behavior of the capacitance in the accumulation could be related to the generation of various defects and trapped charges after gamma irradiation exposure [5], [6], [8], [15].…”

Section: Gamma Irradiation Response On Mos Capacitor Based Sinwsmentioning

confidence: 94%

“…However, as far as gamma irradiation effect is concerned, there is no report in the literature about the influence of radiation on SiNWs based MOS capacitor with Yb2O3 as a oxide layer [15]- [17]. Therefore, it is very important to study and analyze the impact of radiation on the SiNWs based capacitors.…”

Section: Introductionmentioning

confidence: 99%

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC

Mutale¹,

Yılmaz²,

Aytar³

2022

RAP Conference Proceedings

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The investigations of gamma irradiation response on silicon nanowires (SiNWs) based MOS capacitor with high-k of Yb2O3 is very important in the fields of semiconductors physics and nanotechnology. Hence, in this current work, we fabricated SiNWs using metal assisted chemical etching (MACE) technique and then Al/Yb2O3/SiNWs/n-Si (100)/Al MOS capacitor was exposed to gamma rays using Co-60 source at different doses of 0-4Gy, respectively. Our experimental results demonstrated that the capacitance value in the accumulation region decreased with increasing in the radiation dose, while the C-V curves shifted toward negative voltage side. In addition, the interface states density (Dit) increased with an increase in the gamma irradiation exposure. The value of Dit was found in the range of 6.98×10 09 eV -1 cm -2 and 1.14×10 10 eV -1 cm -2 .

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“…Otherwise, many applications of power MOSFETs need to be radiationhardened [12]. In addition, the influence of ionizing radiation on some MOSFETs con-taining different materials [13][14][15][16][17][18][19] and on some commercial electronic devices [20][21][22] has been investigated.…”

Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

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Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

Cited by 31 publications

References 164 publications

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

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Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

Cited by 31 publications

References 164 publications

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al2O3/SiO2/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al2O3/SiO2/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb2O3 GATE DIELECTRIC

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

Contact Info

Product

Resources

About

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

GAMMA IRRADIATION RESPONSE ON SiNWs BASED MOS CAPACITOR WITH HIGH-K Yb₂O₃ GATE DIELECTRIC