Influence of GaInP ordering on the performance of GaInP solar cells

Abstract

CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room temperature and low-temperature photoluminescence (PL) spectra of AlGaInP/GaInP/AlGaInP double heterostructures (DHs) reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

“…It is clear that this decrease comes from the non-radiative defects, which increase the recombination velocity. [26], [27] As µ-PL mapping has a low resolution at the scale of a few micrometers, we carried out cathodoluminescence measurements to gain around two orders of magnitude in resolution. Figures 6 and 7 represent the CL mapping of 6×6 µm², 36×36 µm² and 56×56 µm² pixels.…”