Electroluminescence probe of internal processes of carriers in GaInP single junction solar cell

Su, Zhicheng; Xu, Shijie; Wang, R.X.; Ning, Jiqiang; Dong, Junping; Lu, Shulong; Yang, Han

doi:10.1016/j.solmat.2017.04.041

Cited by 10 publications

(4 citation statements)

References 27 publications

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“…Now we have finished the demonstration of the SA effect in excitonic luminescence spectrum of ZnO. At last, we would like to point out that the major findings and concluding points in this study shall be valid for all luminescence and relevant processes occurring in any luminescent materials and optoelectronic devices [28][29][30][31][32].…”

Section: Resultsmentioning

confidence: 56%

Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect

Tang

et al. 2017

Science Bulletin

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Section: Resultsmentioning

confidence: 56%

Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect

Tang

et al. 2017

Science Bulletin

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“…An asymmetric line shape with a long high-energy tail and relatively faster declining low-energy edge is displayed for both samples, especially for sample A. This kind of profile is usually explained by a conventional band-to-band transition model, which predominately reflects the density of states of three-dimensional electronic structure and the Boltzmann distribution of carriers or free excitons [29]. Moreover, it is worth mentioning that the intensity of sample A is about 5 times stronger than that of sample B.…”

Section: The Optical Propertymentioning

confidence: 92%

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Xu²,

Wei

et al. 2021

Crystals

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The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.

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“…Unlike carrier dynamics of PL in the absorption thickness of the epilayer, the electroluminescence (EL) may have a potential to conduct an in-depth study on some fundamental physical processes occurring inside p-n junction-based solar cells under forward bias voltage. [21] To the best of our knowledge, there are few reports on the investigation of internal behaviors in InGaAsP solar cell by using EL spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Li¹,

Yang²,

Long³

et al. 2023

Chinese Phys. B

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The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence (EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.

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Electroluminescence probe of internal processes of carriers in GaInP single junction solar cell

Cited by 10 publications

References 27 publications

Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect

Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

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