The (Al,Ga)N nanowire film with good flexibility and transparency has been achieved by a electrochemical procedure with low cost. Detaching such films can enhance the peak responsivity and decrease the decay time of ultraviolet photodetectors.

A simple method is proposed for manufacturing the flexible III–V inverted metamorphic solar cells by low‐temperature transfer technology. Benefiting from the special low‐temperature adhesive and the Cu‐plated thin films, only one‐time bonding and extremely easy debonding are needed through the whole process and a negligible effect of residual stress can be obtained, which is critical to large‐size device fabrication. The optical model of light trapping and photon recycling based on the native textured back‐surface reflector of the flexible solar cell is constructed to design the antireflection coating. The flexible 4 in solar cells with a weight‐area density of only 169 g m−2 are successfully mass‐produced. The analysis of the individual subcells using optoelectronic reciprocity relation indicates that the GaAs middle subcell should be further optimized to improve the performance. The technique can be expected to achieve mass production of flexible high‐efficiency large‐size solar cells with low cost.