Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Dominec, Filip; Hospodková, A.; Hubáček, Tomáš; Zíková, Markéta; Pangrác, J.; Kuldová, K.; Vetushka, Aliaksei; Hulicius, E.

doi:10.1016/j.jcrysgro.2018.11.025

Cited by 7 publications

(2 citation statements)

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“…33 Apart from utilizing InGaN UL as a buffer layer, some recent work also demonstrates that GaN buffer layer grown at low temperature under nitrogen improves the PL emission (by 40%) by suppressing some QW chemical contaminations, as indicated by SIMS analysis. 34 In view of the remarkable improvement in the c-plane QW efficiency by inserting the buffer layers, it could be interesting to extend this strategy to m-plane core-shell heterostructures. Because the surface energy of GaN differs from c-plane to m-plane, a variation in the defect density for the InGaN QW grown on the two different facets can be expected.…”

Section: Introductionmentioning

confidence: 99%

“…They are then trapped by the InGaN UL, allowing a later defect-free QW growth . Apart from utilizing InGaN UL as a buffer layer, some recent work also demonstrates that the GaN buffer layer grown at low temperature under nitrogen improves the photoluminescence (PL) emission (by 40%) by suppressing some QW chemical contaminations, as indicated by SIMS analysis . In view of the remarkable improvement in the c -plane QW efficiency by inserting the buffer layers, it could be interesting to extend this strategy to m -plane core–shell heterostructures.…”

Section: Introductionmentioning

confidence: 99%

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Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls

Kapoor

Finot

Grenier

et al. 2020

ACS Appl. Mater. Interfaces

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Different types of buffer layers like InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of c-plane InGaN/GaN based light emitting diodes (LEDs). The present work investigates the role of two different kinds of pregrowth layers (low In-content InGaN UL and GaN UL namely "GaN spacer") on the emission of core-shell m-plane InGaN/GaN single quantum well (QW) grown around Si-doped !̅-GaN microwires obtained by silane-assisted MOVPE. According to photo-and cathodoluminescence measurements performed at room temperature, an improved efficiency of light emission at 435 nm with internal quantum efficiency > 15 % has been achieved by adding a GaN spacer prior to the growth of QW. As revealed by scanning transmission electron microscopy, an ultra-thin residual layer containing Si located at the wire sidewall surfaces favors the formation of highdensity of extended defects nucleated at the first InGaN QW. This contaminated residual incorporation is buried by the growth of GaN spacer and avoids the structural defect formation, therefore explaining the improved optical efficiency. No further improvement is observed by adding the InGaN UL to the structure, which is confirmed by comparable values of the effective carrier lifetime estimated from time-resolved (TR) experiments. Contrary to the case of planar cplane QW where the improved efficiency is attributed to a strong decrease of point defects, the addition of an InGaN UL seem to have no influence in the case of radial m-plane QW.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%