Influence of GaN template thickness and morphology on AlxGa1−xN luminescence properties

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

“…The different growth steps have been described in Refs. [26,28,29], where the correlation between the reflectivity signal evolution and surface morphology obtained from atomic force microscopy (AFM) and scanning electronic microscopy (SEM) has been analyzed and demonstrated. In particular, the morphology of the studied AlGaN layers evolves from a surface covered with discontinued islands to a smooth continued surface, i.e., the transition from 3D to 2D growth mode occurs when the AlGaN (GaN template) thickness increases.…”

“…Although many reports have been published on the study of the layer thickness effect on the structural and optical properties of AlGaN-related heterostructures [24,26,28,29], some fundamental properties are still unexplored for such heterostructures, such as the evolution of the internal electric field and the carrier decay times with AlGaN (or GaN-template) thickness. In fact, due to the presence of charged defects (dislocation, impurities, and point defects) and polarization charges (spontaneous and piezoelectric), a huge internal electric field exists along (0001) direction of hexagonal AlGaN heterostructures [18,30,31].…”

Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects

“…Ga1-xAlxN based ultraviolet (UV) emitters and detectors have been used in large varieties of novels applications in the industrial and military, such as space exploration, medical diagnostics, biochemical agent detection, disinfection and sterilization [1][2]. The wide bandgap semiconductor Ga1-xAlxN can be an outstanding selector because of its physical and chemical stability and detectivity performance [3][4][5].…”

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions

“…XRD can calculate the dislocation density of the sample. There is the following relationship between dislocation density and the full width at half maximum of the rocking curve [20][21][22]:…”