Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers

Gupta, Neha; Chaujar, Rishu

doi:10.1007/s00339-016-0239-9

Cited by 25 publications

(2 citation statements)

References 33 publications

(28 reference statements)

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“…8,9 The interaction between hydrogen gas and a thin Pd layer is possible. [10][11][12] To increase the sensitivity of FET-based sensors, multiple microelectronic devices, such as floating gate MOSFETs, 13 Palladium (Pd) gate MOSFETs, 14 dual gate mosfets, 15 nanowire mosfets 16 etc., have been developed. Cao A et al suggested a silicon nanowire-based H 2 gas sensor to satisfy the need for H2 gassensing.…”

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confidence: 99%

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Mili,

Liana,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

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Metal oxide semiconductor gas sensors are used in various roles and sectors compared to other sensing technology due to their durability, longevity, and sensing capability. The current work proposes a dual-stacked heterogeneous source lateral n-type tunnel field-effect transistor (DSHS-nTFET) for gas sensing applications. In the device’s tunneling junction, the presence of source stack boosts the electric field, reduces tunneling width, and then enhances the band-to-band tunneling. Catalytic metals used as gate contacts for this double source stacking TFET design are explored for the purpose of detecting specific gases. Platinum (Pt), Cobalt (Co), Palladium (Pd), and Silver (Ag) are the metal gate electrodes utilised to sense the target gases, like Carbon-monoxide (CO), Ammonia (NH3), Hydrogen (H2), and Oxygen (O2), respectively. With the aid of the Sentaurus TCAD simulator, the suggested structure has been examined for a number of electrical parameters including electric field, surface potential, drain current, and numerous sensing characteristics pertaining to adsorption of gas molecules. The sensitivity and reliability of the proposed sensor have also beeninvestigated with respect to temperature fluctuations, and it has been shown that the device is largely stable over the 200–400 K range.

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confidence: 99%

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Mili,

Liana,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

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“…However, in MOSFETs, the endless scaling beyond 100 nm nodes resulted in various small-dimension effects such as mobility degradation, drain-induced barrier lowering (DIBL), hot-carrier effect (HCE), parasitic capacitances etc. These short channel effects (SCEs) are the main cause of unwanted off-state leakages, 9 linearity distortion, 7 high frequency noise 3,8 and therefore deteriorates the overall system performance.There are various solutions available in recent literatures to overcome these short dimension effects and also various research groups are continuously working to improve the performance of nanoscaled MOS devices. [10][11][12][13][14][15][16] Recently, conventionally used Si substrates are found in-effective below 100 nm technology node and result in various off-state leakages and DIBL.…”

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confidence: 99%

Linearity Distortion Assessment and Small-Signal Behavior of Nano-Scaled SOI MOSFET for Terahertz Applications

Srivastava

Mishra

2019

ECS J. Solid State Sci. Technol.

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Fully-Depleted Silicon-on-Insulator (FD SOI) MOS technology has already been reported as a strong contender in nanoscale CMOS designs. This work presents the linearity-distortion assessment, small-signal and radio-frequency noise-behavior of dual-metal-insulated-gate (DMIG) source-engineered (SE) FD SOI MOSFET for terahertz (THz) applications. Here, linearity-distortion performance has been monitored on the basis of numerical calculations of transconductance and its higher-order derivatives along with the voltage-intercept points, and various parameters of intermodulation-distortion. This analysis also practices the guidelines of device design with least linearity-distortion in radio-frequency integrated-circuits based communication systems at 50 nm technology node. Further, the small-signal and RF noise-behavior have been examined on the basis of high-frequency scattering-parameters for the analysis of input/output reflection-coefficients (S11/S22), reverse/forward transmission-coefficients (S12/S21), Stern's-stability-factor (K), minimum noise-figure, noise-conductance and cross-correlation factor (). The analysed results affirm the ultimate reduction in reflection-coefficients and a significant increase in transmission-coefficients in case of DMIG FD SOI MOSFET at THz range as compared to existing MOS structures. Also, the analysis reveals the considerable reduction in various radio-frequency noise FOMs and thus represents the device efficacy in low-noise-amplifiers. All these studies have been carried out by performing numerical simulations over TCAD-ATLAS simulator from Silvaco along with quantum-mechanical-effect (QME) and Bohm-quantum-potential (BQP) models.

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RF MOSFETs

Kumari,

Gupta,

Saxena

2024

Encyclopedia of RF and Microwave Engineering

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In this article, the RF performance of different MOSFET architectures such as Silicon‐On‐Insulator (SOI), Lightly Doped Drain (LDD) MOSFET, Graphene FET, and Negative Capacitance (NC) FET have been reported based on the previously reported work in the form of equivalent circuits. Using the data reported in the literature, the cutoff frequency and maximum frequency of oscillation have been summarized with varying channel lengths. Compared results show that multigate architecture results in higher cutoff frequency and a maximum frequency of oscillation, which can be further increased by decreasing the channel length of the MOSFET architecture. However, the deterioration in the resulting device gain at lower channel length has also been reported. Furthermore, the performance of SOI, Silicon‐on‐Nothing (SON), Double Gate (DG), Double‐Gate Silicon‐On‐Insulator (DGSOI), and Empty Space in Double‐Gate (ESDG) architectures have been explored using ATLAS TCAD software tool for RF and digital parameters investigation. The various parameters explored in this article are current density, electric field, breakdown voltage, impact ionization rate, scattering parameters, noise conductance, minimum noise figure, and cross‐correlation factor. The presented results show that, for the same drain current value, ESDG architecture has higher device gain compared to other devices used for comparison along with higher cutoff frequency. However, this higher device gain comes at the cost of a slightly higher minimum noise figure but with improved noise conductance and cross‐correlation factor (slightly higher than DG). Thus, ESDG is a reliable candidate for LNA design compared to other devices.

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Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers

Cited by 25 publications

References 33 publications

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Linearity Distortion Assessment and Small-Signal Behavior of Nano-Scaled SOI MOSFET for Terahertz Applications

RF MOSFETs

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