Influence of gate oxide breakdown on MOSFET device operation

Pompl, T.; Wurzer, H.; Kerber, M.; Eisele, I.

doi:10.1016/s0026-2714(99)00204-8

Cited by 24 publications

(5 citation statements)

References 14 publications

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“…It has been shown that both the PBD and HBD are manifestations of the same phenomenon; the key difference is the extent of degradation in these two stages . For instance, a digital circuit fails to operate when subjected to HBD conditions, but will remain functional in the PBD regime although with reduced performance . Given the above considerations and following Wu et al, in our CAFM experiments, we define h-BN dielectric breakdown as occurring when the leakage current reaches 1–100 nA, that is, around 100 times the leakage noise of ∼30 pA. By this definition, dielectric breakdown is associated with SBD.…”

Section: Results and Discussionmentioning

confidence: 98%

“…32 For instance, a digital circuit fails to operate when subjected to HBD conditions, but will remain functional in the PBD regime although with reduced performance. 33 Given the above considerations and following Wu et al, 30 in our CAFM experiments, we define h-BN dielectric breakdown as occurring when the leakage current reaches 1−100 nA, that is, around 100 times the leakage noise of ∼30 pA. By this definition, dielectric breakdown is associated with SBD. HBD, in our experiments, occurs when the current compliance is set at 10 μA.…”

Section: Resultsmentioning

confidence: 99%

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Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Ranjan

O’Shea

Bosman

et al. 2020

ACS Appl. Mater. Interfaces

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Hexagonal boron nitride (h-BN) has emerged as a promising 2D/layered dielectric owing to its successful integration with graphene and other 2D materials, although a coherent picture of the overall dielectric breakdown mechanism in h-BN is yet to emerge. Here, we have carried out a systematic study using conduction atomic force microscopy to provide insights into the process of defect generation and dielectric degradation in the progressive breakdown (PBD) and hard breakdown (HBD) stages in 2−5 nm thick chemical vapor deposition (CVD)-grown multilayer h-BN films. The PBD and HBD regimes show different behaviors. Under electrical stress in the PBD stage, defects are generated progressively in the h-BN, leading to a gradual reduction of the effective barrier resistance and continuous soft breakdowns (SBDs) of the dielectric material. Random telegraph noise nano-spectroscopy shows that low frequency noise becomes dominant after an SBD event due to the creation of additional defects around the percolation path. We also observe a wide variation in the current−voltage (I−V) breakdown plots in the PBD stage, giving rise to non-Weibull statistical distribution of the breakdown voltage. We attribute this observation to the significant thickness inhomogeneity in the CVD films. At HBD, h-BN materials are always physically removed from the film, leading to the formation of pits at the breakdown location. Interestingly, pit formation is also occasionally observed in the PBD stage under very low current compliances, suggesting that breakdown may proceed by a mixture of defect generation and material removal in h-BN CVD films.

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Section: Results and Discussionmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Ranjan

O’Shea

Bosman

et al. 2020

ACS Appl. Mater. Interfaces

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“…The second case applies when a single breakdown at a certain critical location in a circuit can result in a function failure or the loss of circuit specifications like low power consumption. The most severe gate-oxide breakdowns in MOSFETs occur toward the junctions [11] and enhanced gate-induced drain leakage additionally can increase off-stage leakage current of the transistor [12], [16]. In a critical circuit environment, the minimum of successive breakdown range may be 1 and the distribution of function failure will be dominated by such locations in a circuit.…”

Section: Monte Carlo and Grouping Simulationmentioning

confidence: 99%

Failure Distributions of Successive Dielectric Breakdown Events

Pompl

Kerber

2004

IEEE Trans. Device Mater. Relib.

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Experimental time-dependent dielectric breakdown (TDDB) distributions of standard CMOS hardware are used to demonstrate the problem of detecting a range of successive breakdown events, e.g., from the 5th to the 20th. Specifically, the range and the statistical distribution of successive breakdown events significantly change the shape of the cumulative failure distribution, which is crucial for the low percentile extrapolation. The observed behavior affects the correlation of integrated circuit failure distributions to dielectric breakdown as it is expected that circuit malfunction is caused by a range of successive breakdown events.Index Terms-CMOS integrated circuits, dielectric breakdown, oxide reliability, ultrathin gate oxides.

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“…where ␣ s and ␣ d are the source and drain partitioning coefficients of the MOSFET, 3,4 respectively. The first term of Eq.…”

Section: Resultsmentioning

confidence: 99%

“…Two kinds of models have previously been considered, corresponding to different breakdown locations and leakage mechanisms: 4,5 Gate-to-source/drain and gate-to-channel breakdown. The first one cannot explain the observed parameter variation since being modeled by a leaky path parallel to the channel.…”

Section: Introductionmentioning

confidence: 99%

Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling

Gerrer

Ribes

Ghibaudo

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inModel for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides J. Appl. Phys. 97, 014104 (2005); 10.1063/1.1827343 Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxidesemiconductor field effect transistors J. Appl. Phys. 96, 3473 (2004); 10.1063/1.1776640 Size difference in dielectric-breakdown-induced epitaxy in narrow n-and p-metal oxide semiconductor field effect transistors Appl. Phys. Lett. 83, 2940 (2003); 10.1063/1.1616195 Modeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdown J. Appl. Phys. 94, 703 (2003); 10.1063/1.1579134Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdownThe impact of a soft breakdown-induced leaky weak spot occurring in the channel has been analyzed by two dimensional simulations of a metal oxide semiconductor field effect transistor within the charge sheet approximation. The model proves very efficient in reproducing the device characteristics variations after soft breakdown ͑SBD͒ and enables to properly interpret the correlation observed between device parameter shift ͑e.g., threshold voltage͒ and stress-induced gate leakage current. A partitioning study allows us to extract an expression for the channel debiasing at V d Ͼ 0 and to discriminate each impact of SBD on device characteristics.

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Influence of gate oxide breakdown on MOSFET device operation

Cited by 24 publications

References 14 publications

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Failure Distributions of Successive Dielectric Breakdown Events

Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling

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