Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT

Impact of Al x Ga1−x barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

“…Due to the considerable two-dimensional electron gas (2DEG) and large bandgap present in AlGaN/GaN heterostructures, GaN metal-oxide-semiconductor high-electron mobility transistors have attracted significant attention in radio frequency and power applications. [1][2][3][4] Conventional gate oxide dielectric layers cause the degradation of transconductance and the overall gate capacitance density. [5][6][7] To solve this problem, ferroelectric oxide as a gate insulator is employed because of the high dielectric constant and negative capacitance (NC) effect.…”