In this study, design and simulation of 15GHZ and 10GHZ Low Noise Amplifiers (LNA) have been explored. The simulation has been performed by using the Agilent Advanced Design System (ADS) Software. Tuning and optimization tools of ADS software have been used to optimize results. The minimum Noise Figure (NF min) of the High Electron Mobility Transistor (HEMT) device in our simulation, is lower than previous works. We have designed a 15GHZ LNA based on three design methods basing on the lumped, the distributed and the radial stub elements. The scattering parameters of 15GHZ designed amplifier in the following manner, input return loss (S11), output return loss (S22), forward gain (S21), and isolation (S12) are-17.15dB,-16.92dB and 14.35dB as follow as-17.023 dB, respectively. Furthermore, noise figure of the 15GHZ designed amplifiers is 0.92 dB. Furthermore, the simulation results show that the scattering parameters and noise figure of 10GHZ LNA amplifiers are improved noticeably with respect to the previous works.

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Reduction of transconductance related to the junctionless silicon (JL-Si) transistor shows challenges to its performance for analog/radio frequency (RF) applications. An effective way to increase the transconductance of JL-Si device without reducing its performance is to use III–V semiconductor materials with a high carrier mobility/velocity instead of silicon. In the present study, the application of In[Formula: see text]Ga[Formula: see text]As/GaAs structures is proposed in order to enhance the transconductance of double gate JL (DG-JL) with channel length of 10 nm and body thickness of 5 nm. The importance of the thickness of In[Formula: see text]Ga[Formula: see text]As layer as well as the indium mole fraction on the electrical characteristics of the proposed device is shown in terms of the transconductance by a numerical simulator. By decreasing the thickness of the In[Formula: see text]Ga[Formula: see text]As layer down to 1 nm for a specified mole fraction of 0.3, a maximum transconductance of 1.7 mS/um was obtained. Comparing the results of JL-In[Formula: see text]Ga[Formula: see text]As/GaAs device with JL-GaAs, JL-In[Formula: see text]Ga[Formula: see text]As and JL-Si structures, an increase of 21%, 18% and 44% in transconductance, respectively, was found. Moreover, simulation results show that the proposed structure exhibits output resistance of 300 G[Formula: see text], intrinsic gain of 32.5 dB and unity gain cut-off frequency of 513 GHz. Thus, the JL-In[Formula: see text]Ga[Formula: see text]As/GaAs device can be a good candidate for analog/RF applications.

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