Impact of channel doping engineering on the high-frequency noise performance of junctionless In0.3Ga0.7As/GaAs FET: A numerical simulation study

Fallahnejad, Mohammad; Vadizadeh, Mahdi; Salehi, Alireza; Kashaniniya, Alireza; Razaghian, Farhad

doi:10.1016/j.physe.2019.113715

Cited by 16 publications

(3 citation statements)

References 29 publications

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“…been used. 21,22 Cg is the total gate-capacitance which is a combination of quantum and oxide capacitances in series. This parameter is computed by the following formula:…”

Section: Proposed Structure and Simulation Methodsmentioning

confidence: 99%

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Abbaszadeh

Yousefi

Aderang

2020

ECS J. Solid State Sci. Technol.

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By applying %3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a new local-strained source and channel (LSSC) T-GNRFET. Quantum simulations of the proposed structure have been done in mode-space non-equilibrium Green's function (NEGF) approach in ballistic regime. Simulation results show that in comparison with the conventional T-GNRFET of the same dimensions, the ONcurrent of the proposed structure has been improved considerably. Besides, the proposed structure enjoys better analog characteristics such as transconductance (g m ) and unity-gain frequency (f t ).

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“…been used. 21,22 Cg is the total gate-capacitance which is a combination of quantum and oxide capacitances in series. This parameter is computed by the following formula:…”

Section: Proposed Structure and Simulation Methodsmentioning

confidence: 99%

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Abbaszadeh

Yousefi

Aderang

2020

ECS J. Solid State Sci. Technol.

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“…Various physics models that includes Drift-diffusion, Hydrodynamic model 22,23 Fermi-Dirac statistics, MLDA model (quantum confinement effects), 21 SRH recombination, 24 Band-toband model, 25,26 auger model, Philips unified and Lombardi mobility models, 27 slotboom bandgap narrowing model are included in simulation setup for analysis purpose.…”

Section: T E O T T 1 High K Sio High Kmentioning

confidence: 99%

Optimizing U-Shape FinFETs for Sub-5nm Technology: Performance Analysis and Device-to-Circuit Evaluation in Digital and Analog/Radio Frequency Applications

Ramakrishna,

Valasa,

Bhukya

et al. 2023

ECS J. Solid State Sci. Technol.

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FinFET is considered a potential contender in the era of Multigate field-effect transistors (FETs). Here, we present structural variations for Junctionless FinFET devices at the IRDS sub-5nm technology node. Four JL-FinFET novel structures are proposed, JL-MG-U-FinFET, JL-U-FinFET, JL-Inv-U-FinFET, and JL-DG-Inv-U-FinFET. The electrical and analog/RF performance of these structures are compared and it is found that JL-DG-Inv-U-FinFET gives better performance in terms of minimizing short channel effects as well as in terms of analog/radio frequency characteristics. The ION/IOFF ratio values for (JL-MG-U-FinFET, JL-U-FinFET, JL-Inv-U-FinFET, and JL-DG-Inv-U-FinFET) are observed as 8.5×106, 1.2×109, 2.04×108, and 1.1×1010, respectively. Similarly, the SS values are noted as 93.44, 70.87, 70.61, and 62.1 mV/dec for the respective configurations. The effect of variation in geometrical parameters such as gate length, U-shaped fin width, and U-shaped fin height on DC and analog/RF characteristics is also explored. It has been observed that the DC parameters such as Ion/Ioff ratio, SS are better for higher Lg, lower WU-fin, and higher HU-fin. Moreover, the JL-DG-Inv-U-FinFET-based common source amplifier produced a gain of 5.2. The results reported will aid device engineers in selecting better geometrical parameters to achieve improved JL-DG-Inv-U-FinFET performance.

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“…Therefore, HfO 2 is deposited over a thin layer of SiO 2 [34,35]. The literature survey reveals that channel doping [36,37] and source doping [38,39] must be kept low and high, respectively, to obtain superior characteristics. Therefore, a detailed study of dopingdependent sensitivity analysis becomes inevitable when investigating the performance of any FET-based biosensor.…”

Section: Introductionmentioning

confidence: 99%

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

Das,

Rewari,

Kanaujia

et al. 2023

Phys. Scr.

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This paper proposes a novel dielectric modulated step-graded germanium source biotube FET for label-free biosensing applications. Its integrated structure and unique design combine the benefits of the gate stack, germanium source, triple-gate architecture, and a step-graded biotube channel, resulting in superior performance over existing biosensors. A compact two-dimensional analytical model for channel potential, drain current, threshold voltage, and subthreshold swing has been formulated and agrees well with the simulated results. The comprehensive investigation of different device parameters, including doping and bias, offers valuable insights into optimizing the biosensor’s performance. The proposed biosensor exhibits remarkable sensitivity, achieving up to 263 mV and 1495.52 nA for certain biomolecules, which has been validated by a compact analytical model and simulations performed on the SILVACO TCAD simulator. Several parameters are employed to assess the biosensor’s effectiveness: threshold voltage, ION/IOFF ratio, subthreshold swing, off-current, peak trans-conductance, and on-current. Furthermore, the biotube channel design enables lightweight and cost-efficient biosensors, enhancing the biosensor’s practicality. This work also includes an analysis of the effect of temperature on the biosensor’s performance and characteristics, providing insights into practical applications. High sensitivity of the biosensor signifies a significant advancement in biosensing technology, suggesting a wide range of potential applications in biomedical field.

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Impact of channel doping engineering on the high-frequency noise performance of junctionless In0.3Ga0.7As/GaAs FET: A numerical simulation study

Cited by 16 publications

References 29 publications

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Optimizing U-Shape FinFETs for Sub-5nm Technology: Performance Analysis and Device-to-Circuit Evaluation in Digital and Analog/Radio Frequency Applications

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

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