By studying the temperature-dependent behavior (300 K down to 43 K) of electron thermal conductivity () in a 3.2 nm-thin Ir film, we quantify the extremely confined defect-electron scatterings and isolate the intrinsic phonon-electron scattering that is shared by the bulk Ir. At low temperatures below 50 K, of the film has almost two orders of magnitude reduction from that of bulk Ir. The film has ∂/∂T>0 while the bulk Ir has ∂/∂T <0. We introduce a unified thermal resistivity (=T/) to interpret these completely different ~T relations. It is found that the film and the bulk Ir share a very similar ~T trend while they have a different residual part (Θ 0 ) at 0 K limit: 0~0 for the bulk Ir, and 0 =5.5 mK 2 /W for the film. The Ir film and the bulk Ir have very close ∂Θ/∂T (75 to 290 K): 6.33×10 -3 mK/W for the film and 7.62×10 -3 mK/W for the bulk Ir. This strongly confirms the similar phonon-electron scattering in them. Therefore, the residual thermal resistivity provides an unprecedented way to quantitatively evaluating defectelectron scattering ( 0 ) in heat conduction. Moreover, the interfacial thermal conductance across the grain boundaries is found larger than that of Al/Cu interface, and its value is proportional to a Corresponding author. Email: xwang3@iastate.edu, Tel: 515-294-2085, Fax: 515-294-3261 2 temperature, largely due to the electron's specific heat. A unified interfacial thermal conductance is also defined and firmly proves this relation. Additionally, the electron reflection coefficient is found to be large (88%) and almost temperature independent.3