Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure

Yerişkin, Seçkin Altındal; Asar, Yasemin Şafak

doi:10.1007/s10854-021-06763-z

Cited by 18 publications

(3 citation statements)

References 36 publications

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“…As can be seen in table 2, barrier height is higher for MPS type SDs due to the NG:PVP interface layer. Similar results are also reported in the literature in very recently for MS and MPS type SDs [46][47][48].…”

Section: Diodesupporting

confidence: 92%

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (N_ss) and series resistance (R_s) effects

et al. 2022

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In this paper, an organic interlayer, Rs, and Nss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters of them have been investigated. The interface-traps/states (D it/N ss) were extracted from the IF-VF data as function of energy (Ec-Ess). These results show that the N ss for MPS is much-lower than MS SD and increase from the midgap-energy towards the E c like U-shape. Double-logarithmic IF-VF graphs of them show three linear-regimes for low, intermediate, and high-voltages and in these regimes, TM are governed by ohmic, trap/space charge limited currents (TCLCs/SCLCs), respectively. All these results show that (NG:PVP) interlayer leads to an increase in rectifier-ratio (RR=IF/IR ), BH, R sh, and decrease in N ss, reverse saturation-current (I o), and n. Thus, (NG:PVP) can be successfully utilized as interfacial layer with high performance characteristics.

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Section: Diodesupporting

confidence: 92%

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (N_ss) and series resistance (R_s) effects

et al. 2022

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“…In addition, observed high R s values at 10 kHz was attributed to interfacial GO:P3HT: PCBM layer, the spatial density distribution of N ss , as well as their reorganisation and rearrangement in response to an electric field, depending on how long they take to relax. The high-low frequency (C HF -C LF ) capacitance approach was used to determine the voltage-dependent profile of N ss [63]. N ss , shown in figure 12 and calculated by the following equation, is calculated using the capacitance contribution to the total capacitance.…”

Section: Comparison Of Capacitance/conductance-voltage (C-v G/ω-v ) C...mentioning

confidence: 99%

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

Demirezen,

Dere,

Çetinkaya

et al. 2023

Phys. Scr.

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Graphene oxide (GO) doped poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) interlayered Al/p-Si Schottky barrier diodes (SBDs) were manufactured by spin coating technique and investigated for the effects of GO concentration on electrical and photodiode parameters. The current-voltage (I-V), measurements for the different mass ratios of GO:P3HT:PCBM (0:1:1(S1), 0.5:1:1(S2) and 2:1:1(S3)) used diodes allowed the determination of key electrical parameters, including ideality factor (n), barrier height (ΦB), series resistance (Rs), shunt resistance (Rsh), interface states density (Nss) and optical sensing behaviors in dark and different illumination levels (10, 30, 60, 80 and 100 mW/cm2). The rectification ratio (RR) was found to be in the order of 104. The trends obtained for the n, ΦB, Rs/Rsh and Nss show that these are influenced by the contribution of the GO. Observed increasing behavior of reverse current with increasing illumination shows that this SBDs can be use as photo-diodes/sensors/detectors. On the other hand, it was observed that the linear dynamic range (LDR), which is important parameter for image sensors, increased (6.86, 16.95 and 26.98 for S1, S2 and S3, respectively) with increasing GO contribution. In addition, to investigate and compare in more detail, capacitance-voltage (C-V) and conductance-voltage (G-V) measurements used for the determination of diffusion potential (VD), concentration of dopant acceptor atoms (NA), Fermi energy level (EF), depletion layer width (WD) for low frequency (1kHz) and high frequency (1MHz). The measured capacitance values showed a high value at the low frequency in comparison with the high frequency. This behavior explained on the basis of Nss. The findings suggest that the prepared diodes has the potential to serve as a photo-diodes/sensors/detectors for optical sensing applications.

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“…Recently, Metal/organic material/semiconductor (MOmS) structures such as metal/semiconductor (MS) contacts have received considerable attention as they have low forward voltage drop and fast switching. [1][2][3][4][5][6][7][8][9][10] As the literature suggests, it is viable to improve the performance and reliability of Schottky diodes depending on the organic materials utilized as the interfacial layer 4 Organic materials are inexpensive and easily fabricated, possess easily miniaturized dimensions, high a flexibility, and properties that can be conveniently planned through chemical synthesis. These materials are suitable to be used as Schottky diodes due to their aforementioned advantages, thereby making diodes with organic interface more implementable and alleviating the restrictions of traditional devices with silicon.…”

mentioning

confidence: 99%

Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Çavdar

Demirölmez

Turan

et al. 2022

ECS J. Solid State Sci. Technol.

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Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage and conductance-voltage properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been explored by the series resistance and interface states effects into account. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance, the "R" _"s" and D_it. Result of experiments approved that the "R" _"s" and "D" _"it" are considerable parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance and conductance were corrected to obtain the real diode capacitance ("C" _"c" ) and conductance ("G" _"c" ). Schottky diode parameters such as barrier height ("Φ" _"B" ), ionized donor density ("N" _"D" ), Fermi level ("E" _"F" ), built-in voltage were extracted from frequency-dependent "C" _"c" "-V" and "1" ⁄("C" _"c" ^"2" ) "-V" relations.The "R" _"s" and "D" _"it" values decrease, while the "Φ" _"B" values increase as the frequency increases. Results reveal that the fabricated diode can be used as an powerful material for electronic applications

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Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure

Cited by 18 publications

References 36 publications

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (N_ss) and series resistance (R_s) effects

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (N_ss) and series resistance (R_s) effects

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

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Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure

Cited by 18 publications

References 36 publications

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

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A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (N_ss) and series resistance (R_s) effects

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (N_ss) and series resistance (R_s) effects