Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops

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Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops

Cited by 4 publications

References 23 publications

Effect of Intrinsic and Extrinsic Defects on the Structural, Thermal, and Electrical Properties in p-Type CZ-Si Wafers with Different Carrier Concentrations

Effect of Intrinsic and Extrinsic Defects on the Structural, Thermal, and Electrical Properties in p-Type CZ-Si Wafers with Different Carrier Concentrations

Optimization of bulk microdefect performance in epitaxial silicon wafer

Characterization of grown-in defects in Si wafers by gas decoration

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