Influence of growth direction and strain conditions on the band lineup at GaSb/InSb and InAs/InSb interfaces

Abstract

strain is shown to strongly affect the VBO; in particular, as the pseudomorphic growth conditions are varied, the bulk contribution to the band line-up 1 changes markedly, whereas the interface term is almost constant. On the whole, our calculations yield a band line-up that decreases linearly as the substrate lattice constant is increased, showing its high tunability as a function of different pseudomorphic growth conditions. Finally, the band line-up at the lattice matched InAs/GaSb interface determined using the transitivity rule gave perfect agreement between predicted and experimental results.

Electric fields and valence-band offsets at strained [111] heterojunctions

“…Note that the value (0.17 eV) obtained in Ref. 5 for InAs/Insb [111] grown on an average substrate is in good agreement with the one derived from Fig. 3 (a) (0.19 eV).…”

“…are equal to those used in a previous study and reported elsewhere. 5,17 In order to check the convergence of the valence band offset as a function of the cell dimension, we also performed calculations for (GaSb) 4 /(InSb) 4 and (InAs) 4 /(InSb) 4 SLs grown on the same substrates.…”

Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials

“…This valence band offset corresponds to an unstrained offset for the lnAs/lnSb binaries of 0.36 ±0.04 eV, with the valence band of InSb being higher in energy [6]. Recent first-principles local-density-function calculations predict an unstrained lnAs/lnSb valence band offset of 0.50 eV, in reasonable agreement with our experimental value [12,34]. Cyclotron resonance provided independent confirmation of the type II band offset with observation of the low in-plane effective mass, hole ground state in a p-type InASo.lsSbo.8slInSb SLS [33].…”

“…Models which explain the energy of InAsSblInAs heterostructures with large type II band offsets [45] or inverted band offsets [46] are inconsistent with both our optical studies [15,18] and consensus theoretical predictions [12,34]. Quantum size studies have shown that the electrons are confined in the InAsSb layer of MOCVD-grown lnAsSblInAs and lnAsSblInGaAs heterostuctures [15,16,18].…”

“…Recent band offset calculations for InAsSblInAs heterostructures (see Fig. 11) indicate that holes are clearly confined to the lnAsSb layer, and the conduction band offset is quite small [12,34]. Bandgap reduction through ordering would confine the electrons to the InAsSb and produce a type I heterostructure, and InAsSb superlattices with wider bandgap barriers, such as InGaAslInAsSb or InAsPlInAsSb SLSs, would also be type I.…”