Influence of growth temperature on the optical and structural properties of ultrathin ZnO films

Chiang, Tun-Yuan; Dai, Ching‐Liang; Duan, Lian

doi:10.1016/j.jallcom.2011.02.093

Cited by 25 publications

(11 citation statements)

References 24 publications

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“…On the contrary, on the GaN (0001-Ga) seeding surface, the ALD growth proceeds as a smooth pseudomorphic epitaxial process at the macroscopic scale, with coherent single-crystal stacking of ZnO onto the GaN seed and a sharp hetero-interface. This epitaxial stacking confirms and extends the results previously reported in the literature [11][12][13][14][15] on the ALD epitaxial growth of ZnO on GaN. However, it can be noted that the epitaxial relationship is obtained with a deposition at 180 • C which is lower than the temperature used in previous works [11,12].…”

Section: Discussionsupporting

confidence: 91%

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

et al. 2017

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It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a~2.3% compressive lattice mismatch of the deposited ZnO. The question addressed here is the atomic ordering of deposited ZnO as a function of the lattice mismatch between ZnO and several single-crystal seeding surfaces. We have deposited ZnO using ALD onto either the (111) cubic or (0001) hexagonal surfaces of a set of available single-crystal substrates (GaAs, InP, GaN, SiC), for which the lattice mismatch varies over a wide range of values, positive and negative. It is found that deposition onto surfaces with very high extensive lattice mismatch (GaAs, InP) leads to polycrystalline ZnO, similar to the configuration obtained on an amorphous SiO 2 surface. In contrast, ZnO ALD deposition onto both 2H-GaN (0001-Ga) and 4H-SiC (0001-Si) surfaces with lower and compressive mismatch leads to epitaxial ordering over the whole substrate temperature range of 180-250 • C.

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Section: Discussionsupporting

confidence: 91%

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

et al. 2017

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“…Furthermore, the ultrathin ZnO film deposited at 25°C was rich in atomic defects, such as oxygen vacancies or impurities [ 10 , 11 ]. The optical and physical properties observed in various ZnO structures have been the subject of extensive researches [ 10 , 12 - 15 ], and it is generally conceived that the green-yellow PL emission in ZnO is primarily due to oxygen-related defects residing near the surface. In our study, the ultrathin ZnO film deposited on Si nanopillars at 200°C reveals a strong UV emission band at 374 nm (approximately 3.31 eV) with a full width at half maximum approximately equal to 148 meV (see the inset of Figure 4 ).…”

Section: Resultsmentioning

confidence: 99%

Enhancement of intrinsic emission from ultrathin ZnO films using Si nanopillar template

Chiang

Dai

2012

Nanoscale Res Lett

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Highly efficient room-temperature ultraviolet (UV) luminescence is obtained in heterostructures consisting of 10-nm-thick ultrathin ZnO films grown on Si nanopillars fabricated using self-assembled silver nanoislands as a natural metal nanomask during a subsequent dry etching process. Atomic layer deposition was applied for depositing the ZnO films on the Si nanopillars under an ambient temperature of 200°C. Based on measurements of photoluminescence (PL), an intensive UV emission corresponding to free-exciton recombination (approximately 3.31 eV) was observed with a nearly complete suppression of the defect-associated, broad-range visible emission peak. As compared to the ZnO/Si substrate, the almost five-times-of-magnitude enhancement in the intensity of PL, which peaked around 3.31 eV in the present ultrathin ZnO/Si nanopillars, is presumably attributed to the high surface/volume ratio inherent to the Si nanopillars. This allowed considerably more amount of ZnO material to be grown on the template and led to markedly more efficient intrinsic emission.

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“…For the sample deposited at 400°C, the unchanged (002) peak intensity may be attributed to the near similarity of the annealing temperature to the T s . The crystallite size, D, of the films was calculated using the Debye-Scherer equation [21][22][23]:…”

Section: Methodsmentioning

confidence: 99%

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Al-Salman

Abdullah

2014

Acta Metall. Sin. (Engl. Lett.)

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Undoped ZnO nanostructures were deposited on SiO 2 /Si substrates via radio frequency magnetron sputtering at different deposition temperatures (room temperature, 200, 300, and 400°C). The prepared samples were annealed at 500°C for 2 h under an N 2 flow. The structural, surface morphological, optical, and photoresponse characteristics of ZnO nanostructures as deposited and after annealing were then investigated. The energy bandgaps of all samples after annealing (3.22-3.28 eV) decreased compared with those of the as-deposited specimens. The barrier height increased when the deposition temperature increased and reached 0.77 eV at 400°C after annealing with a leakage current of 0.17 lA at a 5 V bias. The UV photodetector device which was deposited at the optimal temperature of 300°C, has 12.51 9 10 3 % photosensitivity, 2.259 lA dark current, 0.508 s response time, and 0.466 s recovery time. The dark current significantly decreased for all samples after annealing. The proposed UV photodetectors exhibit high performance, high photosensitivity, shorter response and recovery times, and excellent stability at lower bias voltages of 5 and 2 V.

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Influence of growth temperature on the optical and structural properties of ultrathin ZnO films

Cited by 25 publications

References 24 publications

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

Enhancement of intrinsic emission from ultrathin ZnO films using Si nanopillar template

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

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