No abstract

It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a~2.3% compressive lattice mismatch of the deposited ZnO. The question addressed here is the atomic ordering of deposited ZnO as a function of the lattice mismatch between ZnO and several single-crystal seeding surfaces. We have deposited ZnO using ALD onto either the (111) cubic or (0001) hexagonal surfaces of a set of available single-crystal substrates (GaAs, InP, GaN, SiC), for which the lattice mismatch varies over a wide range of values, positive and negative. It is found that deposition onto surfaces with very high extensive lattice mismatch (GaAs, InP) leads to polycrystalline ZnO, similar to the configuration obtained on an amorphous SiO 2 surface. In contrast, ZnO ALD deposition onto both 2H-GaN (0001-Ga) and 4H-SiC (0001-Si) surfaces with lower and compressive mismatch leads to epitaxial ordering over the whole substrate temperature range of 180-250 • C.

We present the wafer-level characterization of a 256-channel optical phased array operating at 1550 nm, allowing the sequential testing of different OPA circuits without any packaging steps. Using this, we establish that due to random fabrication variations, nominally identical circuits must be individually calibrated. With this constraint in mind, we present methods that significantly reduce the time needed to calibrate each OPA circuit. In particular, we show that for an OPA of this scale, a genetic optimization algorithm is already >3x faster than a simple hill climbing algorithm. Furthermore, we describe how the phase modulators within the OPA may be individually characterized ‘in-situ’ and how this information can be used to configure the OPA to emit at any arbitrary angle following a single, initial calibration step.