Influence of Guard-Ring Structure on the Dark Count Rates of Silicon Photomultipliers

Sul, Woo-Suk; Lee, Chaehun; Cho, Gyu-Seong

doi:10.1109/led.2012.2236296

Cited by 14 publications

(11 citation statements)

References 9 publications

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“…In this case, trenches are filled with silicon dioxide: because of the different refractive index of silicon, they also provide "partial" optical isolation, due to reflections at the interface (which depends on the incident angle). An analysis of the different cell isolation technique in SiPM can be found in [36]. The active area is defined by high energy ion implantation (enrichment implant), which increases the electric field only in the active area, to reach the avalanche condition.…”

Section: Recent Sipm Improvementsmentioning

confidence: 99%

Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range

et al. 2019

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Silicon photomultipliers (SiPMs) are single-photon sensitive solid-state detectors that are becoming popular for several applications, thanks to massive performance improvements over the last years. Starting as a replacement for the photomultiplier tube (PMT), they are now used in medical applications, big high-energy physics experiments, nuclear physics experiments, spectroscopy, biology and light detection and ranging (LIDAR) applications. Due to different requirements in terms of detection efficiency, noise, etc., several optimizations have been introduced by the manufacturers; for example, spectral sensitivity has been optimized for visible light, near ultraviolet, vacuum ultraviolet, and near infrared light. Each one of them require specific processes and structural optimization. We present in this paper recent improvements in SiPM performance, owing to a higher cell fill-factor, lower noise, improved silicon materials, and deep trench isolation. We describe issues related to the characterization of analog SiPM, particularly due to the different sources of correlated noise, which have to be distinguished from each other and from the primary pulses. We also describe particular analyses and optimizations conducted for specific applications like the readout of liquid noble gas scintillators, requiring these detectors to operate at cryogenic temperatures.

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Section: Recent Sipm Improvementsmentioning

confidence: 99%

Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range

et al. 2019

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“…Photon detection efficiency (PDE) is the most critical performance indicator for SiPMs. In recent years, the PDE of SiPMs has been significantly improved by different methods, such as reducing noise (Acerbi et al, 2015;Asano et al, 2018) and developing high-density (HD) cell with both small size and high filling factor (Acerbi et al, 2017;Sul et al, 2013).…”

Section: Sipms With Spectral Sensitivity Optimized For Vuv Detectionmentioning

confidence: 99%

Vacuum-Ultraviolet Photon Detections

2020

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Vacuum-ultraviolet (VUV) photon detection technology is an effective means for the exploration in the field of space science (monitoring the formation and evolution of solar storms), high-energy physics (dark matter detection), large-scale scientific facility (VUV free electron lasers) and electronic industry (high-resolution lithography). The advancement of this technology mainly depends on the performance optimization of VUV photodetectors. In this review, we introduced the research progress on the typical VUV photodetectors based on scintillator, photomultiplier tube, semiconductor, and gas, with their unique advantages and optimal performance indicators in different applications summarized. In particular, during recent years, thanks to the advances in ultra-wide bandgap semiconductors, economical VUV photodetectors with low power consumption and small size have been encouragingly developed. Finally, we pointed out the remaining challenges for each type of VUV detector, with the aim of maximizing the performance in a variety of applications in the future.

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“…The primary noise has been reduced, being now at the level of 50-100 kcps/mm 2 [48][49][50][51][52] at T = 20°C (see Figure 9b). The correlated noise has also been reduced due to: (i) an improvement in the silicon materials [43] and (ii) a better cell-to-cell isolation with trenches [46,49,53]. In particular, some examples are: CT probability of 10%, at 8 V of excess bias, with 15 μm cell pitch [48], which increases to 35%, with 7 V of excess bias when the cell pitch is 30 μm, or CT probability of just 3% in a 50 μm cell, with 3 V of excess bias, due to better cell isolation [49].…”

Section: Sipm Performancementioning

confidence: 99%

High Sensitivity Photodetector for Photon-Counting Applications

Acerbi¹,

Perenzoni²

2018

Photon Counting - Fundamentals and Applications

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In the last years, there has been a large development of low-light applications, and many of them are based on photon counting using single-photon detectors (SPDs). These are very sensitive detectors typically with an internal gain. The first candidate SPD was the photomultiplier tube (PMT), reaching a very high gain (~10 6 ), but there have been a large development of many other solutions, like solid-state solutions. Among them, single-photon avalanche diodes (SPADs) have been used in spectroscopy, florescence imaging, etc., particularly for their good detection efficiency and time resolution (tens of picoseconds). SPADs have been developed in silicon and III-V materials, for the NIR wavelength range. SPADs can be used as single high-performance pixels, or in arrays. SPAD arrays have imaging capabilities, with high sensitivity. Another kind of array is the silicon photomultiplier (SiPM), where all the pixels are connected to a common anode and a common cathode. SiPMs are used in nuclear medicine, physics experiments, quantum-physics experiments, light detection and ranging (LIDAR), etc., due to their high detection efficiency combined with large sensitive areas, and high dynamic range. SiPMs with many small cells present several advantages and nowadays the SPAD pitch can be reduced down to 5 μm.

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Influence of Guard-Ring Structure on the Dark Count Rates of Silicon Photomultipliers

Cited by 14 publications

References 9 publications

Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range

Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range

Vacuum-Ultraviolet Photon Detections

High Sensitivity Photodetector for Photon-Counting Applications

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