2017
DOI: 10.1016/j.vacuum.2017.03.027
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Influence of heating temperature of Se effusion cell on Cu(In, Ga)Se2 thin films and solar cells

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Cited by 4 publications
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“…According to the results presented in Figure 1a, the as-obtained sample is a phase mixture of FTO substrate and tetragonal CIGSe with the chalcopyrite structure. 9,14,15 Furthermore, the phase analysis demonstrates no evidence of the presence of oxides or other phases, suggesting that the metal oxides react with the selenium vapor under diluted hydrogen atmosphere forming CIGSe, 2CuO + In 2 O 3 + Ga 2 O 3 + 4Se + 8H 2 = 2Cu(In,Ga)Se 2 + 8H 2 O. The convenience of this synthetic protocol is that the conversion of the oxides into crystalline CIGSe is accomplished in a single step under reductive atmosphere of H 2 .…”
mentioning
confidence: 99%
“…According to the results presented in Figure 1a, the as-obtained sample is a phase mixture of FTO substrate and tetragonal CIGSe with the chalcopyrite structure. 9,14,15 Furthermore, the phase analysis demonstrates no evidence of the presence of oxides or other phases, suggesting that the metal oxides react with the selenium vapor under diluted hydrogen atmosphere forming CIGSe, 2CuO + In 2 O 3 + Ga 2 O 3 + 4Se + 8H 2 = 2Cu(In,Ga)Se 2 + 8H 2 O. The convenience of this synthetic protocol is that the conversion of the oxides into crystalline CIGSe is accomplished in a single step under reductive atmosphere of H 2 .…”
mentioning
confidence: 99%