Influence of Incident Angle of Electron on Transmittance and Tunneling Current in Heterostructures with Bias Voltage by Considering Spin Polarization Effect

Abstract

Abstract. In this work, an analytical expression is presented of electron transmittance through a potential barrier by applying a bias voltage with spin polarization consideration. A zincblende material was employed for the barrier in the heterostructure to calculate the transmittance, which depends on the spin states indicated as "up" and "down". The obtained transmittance was then employed to compute the tunneling current. It was shown that the transmittances are different for each state and asymmetric with incident angle. The polarization is positive for a positive incident angle of and negative for a negative incident angle. It was also shown that the tunneling current did not reach its highest value at an incident angle of 0° (z-direction).

Transmittance and Tunneling Current through a Trapezoidal Barrier under Spin Polarization Consideration

“…By solving the Schrödinger equation and applying the boundary condition at z = 0 and z = d [17], it is easy to find the formulation of the transmission coefficient, f. The formulation is [18] …”