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Abstract. In this work, an analytical expression is presented of electron transmittance through a potential barrier by applying a bias voltage with spin polarization consideration. A zincblende material was employed for the barrier in the heterostructure to calculate the transmittance, which depends on the spin states indicated as "up" and "down". The obtained transmittance was then employed to compute the tunneling current. It was shown that the transmittances are different for each state and asymmetric with incident angle. The polarization is positive for a positive incident angle of and negative for a negative incident angle. It was also shown that the tunneling current did not reach its highest value at an incident angle of 0° (z-direction).

Abstract.The transmittance and tunneling current in heterostructures under spin polarization consideration were studied by employing a zinc-blended structure for the heterostructures. An electron tunnels through a potential barrier by applying a bias voltage to the barrier, which is called the trapezoidal potential barrier. In order to study the transmittance, an Airy wave function approach was employed to find the transmittance. The obtained transmittance was then utilized to compute the tunneling current by using a Gauss quadrature method. It was shown that the transmittances were asymmetric with the incident angle of the electron. It was also shown that the tunneling currents increased as the bias voltage increased.

In this paper, an analytical expression of the electron spin-dependent tunneling current through a potential barrier by applying a bias voltage was investigated. An Airy wavefunction was applied to derive the transmittance through the barrier by considering a zinc-blende material, which depends on the spin states indicated as ‘up’ and ‘down’. The obtained transmittance was employed to compute the polarization and spin-dependent tunneling current. The spin-dependent tunneling current was then observed at various bias voltages and temperatures. It was shown that the spin-polarized current increases as the bias voltage increases. It was also shown that the increase of temperature enhances the spin-dependent tunneling current.