Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

Abstract

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.

Influence of PEG Stoichiometry on Structure-Tuned Formation of Self-Assembled Submicron Nickel Particles

“…It can be observed that the structure of nanoparticles changes from hydrangea-like submicron spheres to tubular as the weight of PEG increases. It seems that the hydrophilic groups in PEG polymeric chain are adsorbed on the surface of nanoparticles to prevent the aggregation, and promote the 3D growth of Ni nanoparticles with reduced surface energy [ 20 , 21 ]. Moreover, the morphologies and structures of Ni nanoparticles are investigated by altering the reaction temperature and reaction time while keeping the other conditions constant.…”