Articles you may be interested inElectronic and chemical properties of molybdenum oxide doped hole injection layers in organic light emitting diodes J. Appl. Phys. 105, 033717 (2009); 10.1063/1.3077170Triarylamine siloxane anode functionalization/hole injection layers in high efficiency/high luminance smallmolecule green-and blue-emitting organic light-emitting diodes

Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/N,N -bis-(1-naphthl)-diphenyl-1,1 -biphenyl-4,4 -diamine (NPB)/Tris(8-quinolinolato) aluminum(Alq3)/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m 2 and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m 2 and 1.25 cd/A.

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-, 10-perylenetetracarboxylic dianhydride (PTCDA) and donor copper phthalocyanine (CuPc) involved in hole injection are fabricated. As compared to the conventional device using a 5 n m CuPc hole injection layer, the device using an interface o f l 0 n m PTCDA and 5nm C e c layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the P T C D A / C e c interface. This study provides a new way of designing hole injection.