Influence of intralayer quantum-well states on the giant magnetoresistance in magnetic multilayers

Ac, Ehrlich

doi:10.1103/physrevlett.71.2300

Cited by 32 publications

(7 citation statements)

References 28 publications

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“…They play an important role in applications based e.g. on the giant magnetoresistance [7] effect or magnetic coupling in multilayer structures [2].…”

Section: Introductionmentioning

confidence: 99%

Quantum well states, resonances and stability of metallic overlayers

Ogando¹,

Zabala

Chulkov

et al. 2008

J. Phys.: Condens. Matter

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The role of quantum well states (QWSs) and quantum well resonances (QWRs) in the stability of metallic overlayers is studied. When the substrate presents a confining gap, as it is the case of Cu(111), the stability is determined by QWSs and there is experimental evidence of the existence of magic thicknesses. For overlayers which do not have QWSs, as those grown on Al(111), we explore the existence of thicknesses of enhanced stability due to QWRs by comparing the strength of the oscillations in the surface energy.

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“…They play an important role in applications based e.g. on the giant magnetoresistance [7] effect or magnetic coupling in multilayer structures [2].…”

Section: Introductionmentioning

confidence: 99%

Quantum well states, resonances and stability of metallic overlayers

Ogando¹,

Zabala

Chulkov

et al. 2008

J. Phys.: Condens. Matter

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“…Electrons can travel more easily either parallel to the layers or perpendicular to the layers if the magnetizations of the two ferromagnets are parallel to one another. The reason for this is that when the magnetizations are parallel, electrons suffer less scattering in going from an electronic band structure state in one of the ferromagnets into a similar or identical electronic band structure state in the other ferromagnet [42,43,45,46]. The difference in resistivity between the case when the magnetizations are parallel and when they are antiparallel can be as large as 12.8% at room temperature [47].…”

Section: Giant Magnetoresistance (Gmr) Sensorsmentioning

confidence: 99%

Advances in magnetometry

Edelstein

2007

J. Phys.: Condens. Matter

100

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This article describes many of the advances in magnetometry. Because much of the recent progress in magnetometry is built on current technology, and to put these advances in the proper perspective, a general discussion of magnetometry will also be presented. The progress includes a remarkable increase in the magnetoresistance of some devices, improved signal processing, and some new types of magnetometer. The large increase in magnetoresistance is a result of an increased understanding of quantum mechanical spin dominated transport in restricted geometries such as multilayers and magnetic tunnel junctions. The new types of magnetometer include magnetoelectric sensors, extraordinary magnetoresistance sensors, and sensors that incorporate MEMS technology. These advances in magnetometer technology offer orders of magnitude increases in sensitivity and/or large decreases in cost and power consumption. Major technological limitations of current magnetic sensors are also discussed.

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“…The presence or absence of QWs in a layer depends on the amount of electron reflection versus electron transmission, which in turn depends on the dissimilarity of the two metals at the interface as well as on interface sharpness. 1,21 Thus, interface roughness should eliminate or prevent the formation of QWs, meaning that for the MTJs under study the top CoFeB free layer is more prone to the formation of QWs due to the better crystallinity and texture, as shown in the X-ray measurements of Ref. 22 for similar MTJs with 1.35 nm of MgO.…”

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confidence: 97%

Observation of spin-dependent quantum well resonant tunneling in textured CoFeB layers

Teixeira

Costa

Ventura

et al. 2014

Applied Physics Letters

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We report the observation of spin-dependent quantum well (QW) resonant tunneling in textured CoFeB free layers of single MgO magnetic tunnel junctions (MTJs). The inelastic electron tunneling spectroscopy spectra clearly show the presence of resonant oscillations in the parallel configuration, which are related with the appearance of majority-spin Δ1 QW states in the CoFeB free layer. To gain a quantitative understanding, we calculated QW state positions in the voltage-thickness plane using the so-called phase accumulation model (PAM) and compared the PAM solutions with the experimental resonant voltages observed for a set of MTJs with different CoFeB free layer thicknesses (tfl = 1.55, 1.65, 1.95, and 3.0 nm). An overall good agreement between experiment and theory was obtained. An enhancement of the tunnel magnetoresistance with bias is observed in a bias voltage region corresponding to the resonant oscillations.

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Influence of intralayer quantum-well states on the giant magnetoresistance in magnetic multilayers

Cited by 32 publications

References 28 publications

Quantum well states, resonances and stability of metallic overlayers

Quantum well states, resonances and stability of metallic overlayers

Advances in magnetometry

Observation of spin-dependent quantum well resonant tunneling in textured CoFeB layers

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