2022
DOI: 10.1364/ao.455096
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Influence of ion-beam etching by Ar ions with an energy of 200–1000  eV on the roughness and sputtering yield of a single-crystal silicon surface

Abstract: The behavior of sputtering yield and the surface roughness of monocrystalline silicon of orientations ⟨ 100 ⟩ , ⟨ 110 ⟩ , and ⟨ 111 ⟩ under the ion-beam bombardment by neutralized Ar ions with energies of 200–1000 eV is studied. The significant dependence (modulation) of sputtering yield on incidence angle due to crystalline structure is observed. It is shown that a sharp increas… Show more

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Cited by 15 publications
(5 citation statements)
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“…This value is comparable to the roughness of classical substrates for the microelectronic industry [16,17]. After ion beam polishing, as shown in [15], one can expect a decrease in roughness to 0.25−0.2 nm, which satisfies the requirements for X-ray optical applications.…”
Section: Discussionsupporting
confidence: 53%
See 1 more Smart Citation
“…This value is comparable to the roughness of classical substrates for the microelectronic industry [16,17]. After ion beam polishing, as shown in [15], one can expect a decrease in roughness to 0.25−0.2 nm, which satisfies the requirements for X-ray optical applications.…”
Section: Discussionsupporting
confidence: 53%
“…The effective roughness was 0.37 nm. We expect that, according to the work of [15], after ion-beam polishing, the roughness will decrease to 0.2−0.25 nm, which is quite sufficient for X-ray optical applications.…”
Section: Resultsmentioning
confidence: 99%
“…10, we purchased a 30 mm  160 mm spherical mirror, which had been shaped to be within AE 1% of the expected ROC, as the base mirror. Also, the mirror was further pitch-polished to achieve the specified roughness level, since IBF can hardly reduce but introduce minimal damage to the roughness (Mikhailenko et al, 2022). The left and right ends of the mirror were marked as A and B, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…Эффективная шероховатость составила 0.37 nm. Мы ожидаем, что, согласно работе [15], после ионно-пучковой полировки шероховатость снизится до величины 0.2−0.25 nm, что вполне достаточно для рентгенооптических приложений.…”
Section: результатыunclassified
“…Эта величина сравнима с шероховатостью классических подложек для микроэлектронной промышленности [16,17]. После ионной пучковой полировки, как показано в [15], можно ожидать снижения шероховатости до 0.25−0.2 nm, что удовлетворяет требованиям к рентгенооптическим приложениям.…”
Section: заключениеunclassified