Influence of irradiation by 24 GeV protons on the properties of 4H–SiC radiation detectors

Kažukauskas, V.; Jasiulionis, R.; Kalendra, Vidmantas; Vaitkus, J.

doi:10.1016/j.diamond.2006.10.004

Cited by 7 publications

(8 citation statements)

References 13 publications

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“…2(b). Similarly, Kazukauskas et al found that particle irradiation caused to an increase in SBHs of Au/4H-SiC SC [16]. On the other hand, Fig.…”

Section: Schottky Contactsmentioning

confidence: 92%

“…So far, many different metals have been used as both ohmic and SC material such as Ni, Al, Co, Ti, Au and W. In addition, because of its superior advantages such as refractory nature, producing low ohmic contact resistivity [3][4][5][6][7][8][9][10][11] and high SBH [12][13][14][15], Ni has been generally chosen as the contact material both for ohmic and SCs in SiC [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The effects of high-energy proton irradiation and highdose gamma ray irradiation on 4H-SiC Schottky rectifiers have been investigated by Nigam et al and Kim et al respectively, [17,18].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC

Çınar¹,

Coşkun²,

Gür³

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…2(b). Similarly, Kazukauskas et al found that particle irradiation caused to an increase in SBHs of Au/4H-SiC SC [16]. On the other hand, Fig.…”

Section: Schottky Contactsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC

Çınar¹,

Coşkun²,

Gür³

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…Numbers and activities of radionuclides and isotopes produced after the irradiation with proton dozes ranging from 1×10 14 up to 1×10 16 p/cm 2 were analysed by the methods that are used for the investigation of cosmogenic radionuclides in the atmosphere. We have reported similar investigations on 4H-SiC detectors [4]. Devices contact properties were analysed by IV dependencies.…”

Section: Methodsmentioning

confidence: 99%

“…Other nuclides with A > 27 were created only in GaN in reactions with nucleons of 69 Ga and 71 Ga. The amounts of 19 radionuclides and 70 isotopes produced in reactions with Ga nuclei were evaluated by comparing the amount of 57 Co and the cross section of its formation from Ga isotopes with the cross sections of the production of different radionuclides and isotopes as described in [4] (Fig. 2).…”

mentioning

confidence: 99%

Effects of the high‐energy proton irradiation on the properties of GaN ionizing radiation detectors

Kažukauskas

Kalendra

Jasiulionis³

et al. 2008

Phys. Status Solidi (c)

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Effects of the irradiation by 24 GeV protons on the properties of GaN ionizing radiation detectors were investigated. Irradiation dozes ranged from 1×1014 up to 1×1016 p/cm2. In the γ‐spectra of the samples radiation of 7Be, 22Na and other long‐living radionuclides with A < 70 was identified. Their activities were proportional to the total irradiation doses. Device contact properties were analysed by IV dependencies. Created defects were revealed by the thermally stimulated spectroscopy. In the less irradiated samples the following values of the effective thermal activation energies were found: 0.12‐0.16 eV, 0.18‐0.22 eV, 0.35‐0.42 eV and 0.84‐0.94 eV. Meanwhile in the detectors irradiated with the highest dozes only current growth with the activation energy of about 0.8‐1.0 eV could be identified. Effects of percolation transport in disordered media were proved in the irradiated material. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In literature, only one previous work dealing with irradiation-induced activation of 4H-SiC particle detectors may be found where long-lived radioactivity induced by 24 GeV protons is discussed. 6 Our motivation has been to find the conceptual limits for on-line electrical characterization of particle detectors by irradiating Czochralski ͑Cz͒ and floatzone ͑Fz͒ grown silicon particle detectors with 7 and 9 MeV protons and following the time evolution of the representative IV and CV curves.…”

Section: Introductionmentioning

confidence: 99%

Effects of activation by proton irradiation on silicon particle detector electric characteristics

Väyrynen

Räisänen

Tikkanen

et al. 2009

Journal of Applied Physics

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After irradiation with 7 and 9 MeV protons, activation-induced effects were encountered in measurements of current-voltage ͑IV͒ and capacitance-voltage ͑CV͒ characteristics for Czochralski and float-zone grown silicon particle detectors prepared on printed circuit boards with copper electrodes. With the present detector construction, the 30 Si͑p , n͒ 30 P and 63 Cu͑p , n͒ 63 Zn reactions induce dominant interference in such measurements. The daughter nuclides are positron emitters with half-lives of 2.5 and 38.5 min, respectively, and the slowing down of the emitted positrons generates a significantly large concentration of electron-hole pairs in the detector volume increasing the leakage current level and decreasing the breakdown voltage. The observed time-dependent characteristics were verified by modeling the activation of the detector structure and the resulting leakage current. As a result, the electrical measurements cannot be performed immediately after irradiation due to silicon activation, and, generally, materials becoming easily activated should be avoided in the detector concept.

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Influence of irradiation by 24 GeV protons on the properties of 4H–SiC radiation detectors

Cited by 7 publications

References 13 publications

Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC

Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC

Effects of the high‐energy proton irradiation on the properties of GaN ionizing radiation detectors

Effects of activation by proton irradiation on silicon particle detector electric characteristics

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