Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

“…It is found to be ~ -137 kcal/mol. In the case of Al impurities, the activation energy of desorption which can be found in the literature are of the same order of magnitude though it is systematically higher, ranging from -160 kcal/mol (calculated from the results in ref 22) to -204 kcal/mol [32]. This is to be correlated to the higher vapor pressure of this element compared to Ge.…”

Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

“…In addition, no B-Si or B-C gas phase species are predicted to form in the presence of Cl at the BCl 3 concentrations used in these experiments. [25], sublimation epitaxy [26], and conventional SiC CVD [22]. No changes in growth surface morphology were observed as the B concentration increased from 10 16 to 10 19 atoms/cm 3 .…”

“…High dopant concentrations were obtained only by supplying very high concentrations of TMA compared to conventional SiC CVD growth. Kojima et al [22] reported a decrease in Al concentration on the Si-face from 10 19 to 10 16 atoms/cm 3 as the growth temperature was increased from 1450 to 1600 1C at a constant TMA flow rate. This was attributed to enhanced desorption of Al from the surface.…”

3C-SiC — From Electronic to MEMS Devices

“…It can be noticed that most of the published works deal with the incorporation of nitrogen within hexagonal SiC polytypes. For them, the SiC polarity is shown to play an important role [19,20]. Nitrogen is preferentially incorporated onto a carbon face and can be reduced by increasing the C/Si ratio regarding the site competition effect.…”

“…In addition, different mechanisms governing the aluminum doping remain a matter of debate. If it is expected that aluminum incorporates in place of silicon atoms, a large dispersion of the experimental results obtained by various groups attests either to some misunderstanding of the mechanism or highlights the influence of the specificity of each growth reactor [19,[22][23][24]. For instance, Forsberg et al have shown that, regarding the specific attachment of one aluminum atom to one carbon atom via a single bond, the dependence of aluminum incorporation differs from Si to C polarity for hexagonal polytypes.…”