Influence of LPE process technological conditions on Si ELO layers morphology

Olchowik, J. M.; Gulkowski, S.; Cieślak, K.; Jóźwik, I.; Fave, Alain; Kaminski, A.

doi:10.1016/j.jnoncrysol.2008.06.039

Cited by 1 publication

(1 citation statement)

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“…More than 80% of the current solar cells production requires cutting of large silicon crystal. The technology which could avoid the material losses can be a method for future developing cost-efficient solar cells [7,8]. Basic device structure of these two technologies is the same.…”

Section: Introductionmentioning

confidence: 99%

Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

Gulkowski

Krawczak

2017

E3S Web Conf.

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Abstract. Among a variety of the thin film solar cell technologies of second generation, copperindium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

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Section: Introductionmentioning

confidence: 99%