Influence of Material Composition on Structural and Optical Properties of HfO2-TiO2 Mixed Oxide Coatings

Mazur, М.; Kaczmarek, Danuta; Domaradzki, J.; Wojcieszak, Damian; Poniedziałek, Agata

doi:10.3390/coatings6010013

Cited by 11 publications

(9 citation statements)

References 38 publications

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“…Additional annealing caused the occurrence of tensile stress in (Hf 0.52 Ti 0.48 )Ox and (Hf 0.29 Ti 0.71 )Ox. The type of stress occurring in the annealed coatings was determined on the basis of ∆d parameter from the following equation [40,47,48]:…”

Section: Resultsmentioning

confidence: 99%

“…It is well known that HfO 2 and TiO 2 are both indirect band gap insulators, so the mixed HfO 2 -TiO 2 film can be also regarded as an indirect allowed transition material [1,19,22,40,41,53]. The Tauc plots were used to assess the optical band gap energy of the deposited and annealed thin films, which was determined for indirect transitions [55][56][57].…”

Section: Resultsmentioning

confidence: 99%

“…The obtained E g opt values for amorphous films were equal to 3.54 eV and 3.37 eV for (Hf 0.52 Ti 0.48 )Ox and (Hf 0.29 Ti 0.71 )Ox, respectively. According to the literature [6,11,18,22,29,40,41,56], thin films based on a mixture of two oxides with significantly different values of band gap energy (with a wide and narrow energy gap) can be a material with a modified (tailored) value of this parameter. Jiang and others [6] showed that for mixed HfO 2 -TiO 2 thin films with an amorphous phase, the values of E g opt were in the range from 3.59 to 3.77 eV.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, mixed oxide thin films based on HfO 2 and TiO 2 have attracted a lot of attention due to their potential application in, e.g. metal oxide semiconductor devices, thin film transistors, optical and protective coatings or memory devices [39][40][41][42].…”

Section: Introductionmentioning

confidence: 99%

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The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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In this paper a comparison of electrical and optical properties of mixed hafnium-titanium oxides is described. Thin films were deposited with the use of the magnetron co-sputtering method. For further analysis (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71) Ox coatings, which were amorphous directly after the deposition process, were chosen,. Moreover, post-process annealing was also performed in order to compare the electrical and optical properties of amorphous and nanocrystalline thin films with the same material composition. It was found that the phase transition from amorphous to orthorhombic HfTiO 4 occurred in the case of (Hf 0.52 Ti 0.48)Ox coating at 650 °C. In turn, the phase transition to TiO 2-anatase was observed at the temperature of 600 °C in the case of (Hf 0.29 Ti 0.71)Ox thin film. The leakage current for both amorphous coatings was in the range of 10 −7-10 −8 A/cm 2. After additional annealing and phase transition, the leakage current slightly decreased for (Hf 0.29 Ti 0.71)Ox thin film, while in the case of (Hf 0.52 Ti 0.48)Ox sample the resistance switching effect was observed. The dielectric constant was equal to 24 and 25 for amorphous (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71)Ox films, respectively. However, after the phase transition it decreased to 15 for (Hf 0.52 Ti 0.48)Ox and increased to 51 for (Hf 0.29 Ti 0.71)Ox film. The results of optical studies showed that amorphous thin films were well transparent in a visible light range with an average transparency of ca. 85%. After the phase transition to HfTiO 4-orthorhombic and TiO 2-anatase, a slight decrease in the transparency level by 3% and a redshift of the cutoff wavelength was observed. Moreover, additional annealing caused small changes of the optical band gap energy, refractive index and extinction coefficient.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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“…Microstructures of HfO 2 , TiO 2 and HfO 2 -TiO 2 films deposited by reactive magnetron sputtering were investigated by Mazur et al[85]. SEM images of HfO 2 , (Hf0.83 Ti 0.17 )O x , (Hf 0.72 Ti 0.28 )O x , (Hf 0.55 Ti 0.45 )O x and TiO 2 thin films are shown in Fig.…”

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Hf-Based High-κ Dielectrics: A Review

KOL

Oral

2019

Acta Phys. Pol. A

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In the last decades, the number of transistors per chip with integrated circuits has increased leading to reduction in the thickness of silicon dioxide used as gate dielectrics. However, at small dielectric thicknesses leakage current formation has begun due to the quantum tunneling effect. Thus, it became essential to replace SiO2 with alternative dielectrics with high dielectric constant to maintain the same capacitance at higher gate dielectric thicknesses. This review analyzes alternative high-κ dielectric materials substituting for SiO2. For this reason, the properties of materials with high dielectric constant are compared to SiO2 with a special emphasis on HfO2, since it is the most promising high-κ dielectric to replace SiO2. The fundamental points concerning HfO2 gate dielectrics are their high dielectric constant and their thermodynamic stability when in contact with Si. In this article, properties of HfO2 fabricated with different coating methods and doped with different elements such as N, Si, Al, Ti and Ta have been compared and discussed. In the conclusion part, we have summarized the results of characterization obtained by X-ray diffraction, scanning electron microscopy, leakage current density-voltage (J-V ), capacitance-voltage (C-V ) and UV-vis spectroscopy of HfO2 thin films.

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Surface wettability, morphology and optical characteristics of HfO2 films grown systematically by electron beam evaporation

Kant

Kumar

et al. 2023

Appl. Phys. A

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Influence of Material Composition on Structural and Optical Properties of HfO2-TiO2 Mixed Oxide Coatings

Cited by 11 publications

References 38 publications

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Hf-Based High-κ Dielectrics: A Review

Surface wettability, morphology and optical characteristics of HfO2 films grown systematically by electron beam evaporation

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